The stress dependence of acoustic properties of heavily doped n-type Ge

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The authors calculate the uniaxial stress dependence of the acoustic properties of heavily doped n-type Ge at low temperatures using Green function techniques. It is shown that the results are consistent with experiments of Sb-doped Ge made previously provided that Fermi levels lie in the impurity band. A brief discussion of the magnetic field dependence is also given.

    Original languageEnglish
    Article number004
    Pages (from-to)4547-4553
    Number of pages7
    JournalJournal of Physics: Condensed Matter
    Volume3
    Issue number25
    DOIs
    Publication statusPublished - 1991

    Fingerprint

    Acoustic properties
    acoustic properties
    Fermi level
    Green's function
    Impurities
    Magnetic fields
    Green's functions
    Experiments
    impurities
    Temperature
    magnetic fields

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    The stress dependence of acoustic properties of heavily doped n-type Ge. / Watanabe, Hiroshi; Sota, Takayuki; Suzuki, K.

    In: Journal of Physics: Condensed Matter, Vol. 3, No. 25, 004, 1991, p. 4547-4553.

    Research output: Contribution to journalArticle

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