The stress dependence of acoustic properties of heavily doped n-type Ge

H. Watanabe, T. Sota, K. Suzuki

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The authors calculate the uniaxial stress dependence of the acoustic properties of heavily doped n-type Ge at low temperatures using Green function techniques. It is shown that the results are consistent with experiments of Sb-doped Ge made previously provided that Fermi levels lie in the impurity band. A brief discussion of the magnetic field dependence is also given.

Original languageEnglish
Article number004
Pages (from-to)4547-4553
Number of pages7
JournalJournal of Physics: Condensed Matter
Volume3
Issue number25
DOIs
Publication statusPublished - 1991 Dec 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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