The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

Lian Ji, Ming Tan, Chao Ding, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” – beryllium (Be) atom in p-type InGaAsP.

    Original languageEnglish
    Pages (from-to)110-114
    Number of pages5
    JournalJournal of Crystal Growth
    Volume458
    DOIs
    Publication statusPublished - 2017 Jan 15

    Keywords

    • A3. Molecular beam epitaxy
    • B2. Semiconducting III-V materials
    • B3. Solar cells

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

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  • Cite this

    Ji, L., Tan, M., Ding, C., Honda, K., Harasawa, R., Yasue, Y., Wu, Y., Dai, P., Tackeuchi, A., Bian, L., Lu, S., & Yang, H. (2017). The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device. Journal of Crystal Growth, 458, 110-114. https://doi.org/10.1016/j.jcrysgro.2016.11.003