The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

Lian Ji, Ming Tan, Chao Ding, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” – beryllium (Be) atom in p-type InGaAsP.

    Original languageEnglish
    Pages (from-to)110-114
    Number of pages5
    JournalJournal of Crystal Growth
    Volume458
    DOIs
    Publication statusPublished - 2017 Jan 15

    Fingerprint

    Rapid thermal annealing
    Molecular beam epitaxy
    annealing
    Photoluminescence
    Beryllium
    photoluminescence
    Conversion efficiency
    Solar cells
    Energy gap
    beryllium
    Doping (additives)
    Annealing
    Atoms
    Crystals
    depletion
    molecular beam epitaxy
    solar cells
    Electric potential
    electric potential
    decay

    Keywords

    • A3. Molecular beam epitaxy
    • B2. Semiconducting III-V materials
    • B3. Solar cells

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Inorganic Chemistry
    • Materials Chemistry

    Cite this

    The striking influence of rapid thermal annealing on InGaAsP grown by MBE : material and photovoltaic device. / Ji, Lian; Tan, Ming; Ding, Chao; Honda, Kazuki; Harasawa, Ryo; Yasue, Yuya; Wu, Yuanyuan; Dai, Pan; Tackeuchi, Atsushi; Bian, Lifeng; Lu, Shulong; Yang, Hui.

    In: Journal of Crystal Growth, Vol. 458, 15.01.2017, p. 110-114.

    Research output: Contribution to journalArticle

    Ji, L, Tan, M, Ding, C, Honda, K, Harasawa, R, Yasue, Y, Wu, Y, Dai, P, Tackeuchi, A, Bian, L, Lu, S & Yang, H 2017, 'The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device', Journal of Crystal Growth, vol. 458, pp. 110-114. https://doi.org/10.1016/j.jcrysgro.2016.11.003
    Ji, Lian ; Tan, Ming ; Ding, Chao ; Honda, Kazuki ; Harasawa, Ryo ; Yasue, Yuya ; Wu, Yuanyuan ; Dai, Pan ; Tackeuchi, Atsushi ; Bian, Lifeng ; Lu, Shulong ; Yang, Hui. / The striking influence of rapid thermal annealing on InGaAsP grown by MBE : material and photovoltaic device. In: Journal of Crystal Growth. 2017 ; Vol. 458. pp. 110-114.
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