The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

Lian Ji, Ming Tan, Chao Ding, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu, Hui Yang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Rapid thermal annealing (RTA) has been performed on InGaAsP solar cells with the bandgap energy of 1 eV grown by molecular beam epitaxy. With the employment of RTA under an optimized condition, the open voltage was increased from 0.45 to 0.5 V and the photoelectric conversion efficiency was increased from 11.87–13.2%, respectively, which was attributed to the crystal quality improvement of p-type InGaAsP and therefore a reduced recombination current inside depletion region. The integral photoluminescence (PL) intensity of p-type InGaAsP increased to 166 times after annealing at 800 °C and its PL decay time increased by one order of magnitude. While the changes of nominally undoped and n-doped InGaAsP were negligible. The different behaviors of the effect of RTA on InGaAsP of different doping types were attributed to the highly mobile “activator” – beryllium (Be) atom in p-type InGaAsP.

Original languageEnglish
Pages (from-to)110-114
Number of pages5
JournalJournal of Crystal Growth
Volume458
DOIs
Publication statusPublished - 2017 Jan 15

Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting III-V materials
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device'. Together they form a unique fingerprint.

Cite this