The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth

Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO 2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N 2 / (N 2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

Original languageEnglish
Title of host publicationAdvanced Metallization Conference (AMC)
EditorsD. Edelstein, G. Dixit, Y. Yasuda, T. Ohba
Pages409-412
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
EventAdvanced Metallization Conference 2000 - San Diego, CA, United States
Duration: 2000 Oct 22000 Oct 4

Other

OtherAdvanced Metallization Conference 2000
CountryUnited States
CitySan Diego, CA
Period00/10/200/10/4

Fingerprint

Magnetron sputtering
Film thickness
Kinetics

ASJC Scopus subject areas

  • Chemical Engineering(all)

Cite this

Tepsanongsuk, K., Noda, S., Tsuji, Y., & Komiyama, H. (2000). The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth In D. Edelstein, G. Dixit, Y. Yasuda, & T. Ohba (Eds.), Advanced Metallization Conference (AMC) (pp. 409-412)

The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth . / Tepsanongsuk, Kun; Noda, Suguru; Tsuji, Yoshiko; Komiyama, Hiroshi.

Advanced Metallization Conference (AMC). ed. / D. Edelstein; G. Dixit; Y. Yasuda; T. Ohba. 2000. p. 409-412.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tepsanongsuk, K, Noda, S, Tsuji, Y & Komiyama, H 2000, The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth in D Edelstein, G Dixit, Y Yasuda & T Ohba (eds), Advanced Metallization Conference (AMC). pp. 409-412, Advanced Metallization Conference 2000, San Diego, CA, United States, 00/10/2.
Tepsanongsuk K, Noda S, Tsuji Y, Komiyama H. The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth In Edelstein D, Dixit G, Yasuda Y, Ohba T, editors, Advanced Metallization Conference (AMC). 2000. p. 409-412
Tepsanongsuk, Kun ; Noda, Suguru ; Tsuji, Yoshiko ; Komiyama, Hiroshi. / The structure control of sputtered TaN films on SiO 2 through the study of evolutionary selection growth Advanced Metallization Conference (AMC). editor / D. Edelstein ; G. Dixit ; Y. Yasuda ; T. Ohba. 2000. pp. 409-412
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