The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth

Kun Tepsanongsuk; Suguru Noda; Yoshiko Tsuji; Hiroshi Komiyama

The structure control of sputtered TaN films on SiO₂ through the study of evolutionary selection growth

Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama

Research output: Contribution to journal › Conference article › peer-review

Abstract

The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO₂ was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N₂ / (N₂+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

Original language	English
Pages (from-to)	409-412
Number of pages	4
Journal	Advanced Metallization Conference (AMC)
Publication status	Published - 2000 Dec 1
Externally published	Yes
Event	Advanced Metallization Conference 2000 - San Diego, CA, United States Duration: 2000 Oct 2 → 2000 Oct 4

ASJC Scopus subject areas

Chemical Engineering(all)

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title = "The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth",

abstract = "The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by {"}Evolutionary selection{"}, where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.",

author = "Kun Tepsanongsuk and Suguru Noda and Yoshiko Tsuji and Hiroshi Komiyama",

year = "2000",

month = dec,

day = "1",

language = "English",

pages = "409--412",

journal = "Advanced Metallization Conference (AMC)",

issn = "1048-0854",

note = "Advanced Metallization Conference 2000 ; Conference date: 02-10-2000 Through 04-10-2000",

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TY - JOUR

T1 - The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth

AU - Tepsanongsuk, Kun

AU - Noda, Suguru

AU - Tsuji, Yoshiko

AU - Komiyama, Hiroshi

PY - 2000/12/1

Y1 - 2000/12/1

N2 - The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

AB - The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

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M3 - Conference article

AN - SCOPUS:0034461293

SP - 409

EP - 412

JO - Advanced Metallization Conference (AMC)

JF - Advanced Metallization Conference (AMC)

SN - 1048-0854

T2 - Advanced Metallization Conference 2000

Y2 - 2 October 2000 through 4 October 2000

ER -