Abstract
The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.
| Original language | English |
|---|---|
| Pages (from-to) | 409-412 |
| Number of pages | 4 |
| Journal | Advanced Metallization Conference (AMC) |
| Publication status | Published - 2000 Dec 1 |
| Event | Advanced Metallization Conference 2000 - San Diego, CA, United States Duration: 2000 Oct 2 → 2000 Oct 4 |
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ASJC Scopus subject areas
- Chemical Engineering(all)
Cite this
Tepsanongsuk, K., Noda, S., Tsuji, Y., & Komiyama, H. (2000). The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth. Advanced Metallization Conference (AMC), 409-412.