The structure control of sputtered TaN films on SiO2 through the study of evolutionary selection growth

Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama

Research output: Contribution to journalConference articlepeer-review


The growth mechanism of TaN films deposited by r.f. magnetron sputtering on SiO2 was studied. At the initial stage, a TaN film about 30 nm thick is randomly orientated. With increasing film thickness to about 100 nm, the film has (111) orientation. The film orientation then changes into (200), which has kinetic stability on 4% N2 / (N2+Ar) flow ratio. This phenomenon is explained by "Evolutionary selection", where only a few favored orientations with nearly maximum vertical growth rate will remain in the final stage and all other orientations will gradually disappear.

Original languageEnglish
Pages (from-to)409-412
Number of pages4
JournalAdvanced Metallization Conference (AMC)
Publication statusPublished - 2000 Dec 1
Externally publishedYes
EventAdvanced Metallization Conference 2000 - San Diego, CA, United States
Duration: 2000 Oct 22000 Oct 4

ASJC Scopus subject areas

  • Chemical Engineering(all)


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