Theoretical Analysis of Longevity Testing on Bubble Memory Devices

Sadamu Ohteru, Tomokazu Kato, Yoshio Watanabe, Yuu Watanabe, Shuji Hashimoto

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Theoretical results of magnetic bubble device long-term reliability testing are reported. The bubble during propagation along Permalloy tracks is represented by a simple, one-dimensional stochastic model. An equation to describe fluctuation in cylindrical bubble radius is approximated in the Langevin type stochastic differential equation, in which a set of small effects, such as interaction among bubbles and crystal nonuniformity, are considered as a white noise forcing term. Estimating the average time to bubble annihilation or runout (bubble memory mean time to failure) is reduced to a level-crossing problem for a random process. Calculated bias field margin degradation shows a qualitative agreement with experimental results for an actual bubble device. Bubble material parameters for obtaining maximum operation time are suggested.

Original languageEnglish
Pages (from-to)1399-1403
Number of pages5
JournalIEEE Transactions on Magnetics
VolumeMAG-16
Issue number6
DOIs
Publication statusPublished - 1980
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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  • Cite this

    Ohteru, S., Kato, T., Watanabe, Y., Watanabe, Y., & Hashimoto, S. (1980). Theoretical Analysis of Longevity Testing on Bubble Memory Devices. IEEE Transactions on Magnetics, MAG-16(6), 1399-1403. https://doi.org/10.1109/TMAG.1980.1060878