Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka; Y. Shibata; M. Itoh; Y. Tohmori; Y. Yoshikuni

doi:10.1117/12.432589

Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

Original language	English
Pages (from-to)	398-405
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4283
DOIs	https://doi.org/10.1117/12.432589
Publication status	Published - 2001 Jan 1
Externally published	Yes
Event	Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: 2001 Jan 22 → 2001 Jan 26

Keywords

Gain
K.p
Polarization sensitivity
Semiconductor optical amplifier
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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@article{9abd5c23cd894df1a4d8a8505a2afebb,

title = "Theoretical analysis of polarization sensitivity of strained bulk SOAs",

abstract = "The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.",

keywords = "Gain, K.p, Polarization sensitivity, Semiconductor optical amplifier, Strain",

author = "T. Kakitsuka and Y. Shibata and M. Itoh and Y. Tohmori and Y. Yoshikuni",

year = "2001",

month = jan,

day = "1",

doi = "10.1117/12.432589",

language = "English",

volume = "4283",

pages = "398--405",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Physics and Simulation of Optoelectronic Devices IX ; Conference date: 22-01-2001 Through 26-01-2001",

}

TY - JOUR

T1 - Theoretical analysis of polarization sensitivity of strained bulk SOAs

AU - Kakitsuka, T.

AU - Shibata, Y.

AU - Itoh, M.

AU - Tohmori, Y.

AU - Yoshikuni, Y.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

AB - The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

KW - Gain

KW - K.p

KW - Polarization sensitivity

KW - Semiconductor optical amplifier

KW - Strain

UR - http://www.scopus.com/inward/record.url?scp=0034774577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034774577&partnerID=8YFLogxK

U2 - 10.1117/12.432589

DO - 10.1117/12.432589

M3 - Conference article

AN - SCOPUS:0034774577

VL - 4283

SP - 398

EP - 405

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

T2 - Physics and Simulation of Optoelectronic Devices IX

Y2 - 22 January 2001 through 26 January 2001

ER -