Abstract
The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.
| Original language | English |
|---|---|
| Pages (from-to) | 398-405 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4283 |
| DOIs | |
| Publication status | Published - 2001 Jan 1 |
| Externally published | Yes |
| Event | Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: 2001 Jan 22 → 2001 Jan 26 |
Keywords
- Gain
- K.p
- Polarization sensitivity
- Semiconductor optical amplifier
- Strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
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Cite this
Kakitsuka, T., Shibata, Y., Itoh, M., Tohmori, Y., & Yoshikuni, Y. (2001). Theoretical analysis of polarization sensitivity of strained bulk SOAs. Proceedings of SPIE - The International Society for Optical Engineering, 4283, 398-405. https://doi.org/10.1117/12.432589