Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Research output: Contribution to journalConference article

7 Citations (Scopus)

Abstract

The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

Original languageEnglish
Pages (from-to)398-405
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4283
DOIs
Publication statusPublished - 2001 Jan 1
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States
Duration: 2001 Jan 222001 Jan 26

Keywords

  • Gain
  • K.p
  • Polarization sensitivity
  • Semiconductor optical amplifier
  • Strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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