Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka; Y. Shibata; M. Itoh; Y. Tohmori; Y. Yoshikuni

doi:10.1117/12.432589

Theoretical analysis of polarization sensitivity of strained bulk SOAs

T. Kakitsuka, Y. Shibata, M. Itoh, Y. Tohmori, Y. Yoshikuni

Graduate School of Information, Production and Systems

Research output: Contribution to journal › Conference article

7 Citations (Scopus)

Abstract

The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

Original language	English
Pages (from-to)	398-405
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4283
DOIs	https://doi.org/10.1117/12.432589
Publication status	Published - 2001 Jan 1
Event	Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: 2001 Jan 22 → 2001 Jan 26

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Keywords

Gain
K.p
Polarization sensitivity
Semiconductor optical amplifier
Strain

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Cite this

Kakitsuka, T., Shibata, Y., Itoh, M., Tohmori, Y., & Yoshikuni, Y. (2001). Theoretical analysis of polarization sensitivity of strained bulk SOAs. Proceedings of SPIE - The International Society for Optical Engineering, 4283, 398-405. https://doi.org/10.1117/12.432589

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abstract = "The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.",

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AU - Kakitsuka, T.

AU - Shibata, Y.

AU - Itoh, M.

AU - Tohmori, Y.

AU - Yoshikuni, Y.

PY - 2001/1/1

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N2 - The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

AB - The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

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KW - K.p

KW - Polarization sensitivity

KW - Semiconductor optical amplifier

KW - Strain

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10.1117/12.432589