Abstract
The polarization dependence of 1.55-μm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k·p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.
Original language | English |
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Pages (from-to) | 398-405 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4283 |
DOIs | |
Publication status | Published - 2001 Jan 1 |
Externally published | Yes |
Event | Physics and Simulation of Optoelectronic Devices IX - San Jose, CA, United States Duration: 2001 Jan 22 → 2001 Jan 26 |
Keywords
- Gain
- K.p
- Polarization sensitivity
- Semiconductor optical amplifier
- Strain
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering