Theoretical aspects of light-activated microelectrodes in redox electrolytes

Huanfeng Zhu; Barry Miller; Daniel Alberto Scherson

doi:10.1149/1.3257616

Theoretical aspects of light-activated microelectrodes in redox electrolytes

Huanfeng Zhu^*, Barry Miller, Daniel Alberto Scherson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The behavior of semiconductor-based, light-activated microelectrodes in redox electrolytes has been examined theoretically using commercial software to self-consistently solve the transport equations for solid-state and solution-phase species and the electrostatic potential within the semiconductor phase, subject to the appropriate boundary conditions under steady state. The light-limited currents for such spatially localized microelectrodes, observed for a high voltage bias, φ_bias, under normal irradiation and a strict axisymmetric geometry, were proportional to the photon flux intensity. The results of these simulations afforded strong evidence that under high φ_bias, holes generated by the light on an n-type semiconductor escape beyond the edge of the illuminated disk, leading to a net increase in the predicted current and thus in the effective area of the light-activated microelectrode.

Original language	English
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1149/1.3257616
Publication status	Published - 2010 Jan 21
Externally published	Yes

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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title = "Theoretical aspects of light-activated microelectrodes in redox electrolytes",

abstract = "The behavior of semiconductor-based, light-activated microelectrodes in redox electrolytes has been examined theoretically using commercial software to self-consistently solve the transport equations for solid-state and solution-phase species and the electrostatic potential within the semiconductor phase, subject to the appropriate boundary conditions under steady state. The light-limited currents for such spatially localized microelectrodes, observed for a high voltage bias, φbias, under normal irradiation and a strict axisymmetric geometry, were proportional to the photon flux intensity. The results of these simulations afforded strong evidence that under high φbias, holes generated by the light on an n-type semiconductor escape beyond the edge of the illuminated disk, leading to a net increase in the predicted current and thus in the effective area of the light-activated microelectrode.",

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T1 - Theoretical aspects of light-activated microelectrodes in redox electrolytes

AU - Zhu, Huanfeng

AU - Miller, Barry

AU - Scherson, Daniel Alberto

PY - 2010/1/21

Y1 - 2010/1/21

N2 - The behavior of semiconductor-based, light-activated microelectrodes in redox electrolytes has been examined theoretically using commercial software to self-consistently solve the transport equations for solid-state and solution-phase species and the electrostatic potential within the semiconductor phase, subject to the appropriate boundary conditions under steady state. The light-limited currents for such spatially localized microelectrodes, observed for a high voltage bias, φbias, under normal irradiation and a strict axisymmetric geometry, were proportional to the photon flux intensity. The results of these simulations afforded strong evidence that under high φbias, holes generated by the light on an n-type semiconductor escape beyond the edge of the illuminated disk, leading to a net increase in the predicted current and thus in the effective area of the light-activated microelectrode.

AB - The behavior of semiconductor-based, light-activated microelectrodes in redox electrolytes has been examined theoretically using commercial software to self-consistently solve the transport equations for solid-state and solution-phase species and the electrostatic potential within the semiconductor phase, subject to the appropriate boundary conditions under steady state. The light-limited currents for such spatially localized microelectrodes, observed for a high voltage bias, φbias, under normal irradiation and a strict axisymmetric geometry, were proportional to the photon flux intensity. The results of these simulations afforded strong evidence that under high φbias, holes generated by the light on an n-type semiconductor escape beyond the edge of the illuminated disk, leading to a net increase in the predicted current and thus in the effective area of the light-activated microelectrode.

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Theoretical aspects of light-activated microelectrodes in redox electrolytes

Abstract

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