Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch

Alpana Nayak, Tohru Tsuruoka, Kazuya Terabe, Tsuyoshi Hasegawa, Masakazu Aono

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.

Original languageEnglish
Article number233501
JournalApplied Physics Letters
Volume98
Issue number23
DOIs
Publication statusPublished - 2011 Jun 6
Externally publishedYes

Fingerprint

switches
kinetics
metals
solid electrolytes
dissolving
temperature
electrodes
electric fields
atoms

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch. / Nayak, Alpana; Tsuruoka, Tohru; Terabe, Kazuya; Hasegawa, Tsuyoshi; Aono, Masakazu.

In: Applied Physics Letters, Vol. 98, No. 23, 233501, 06.06.2011.

Research output: Contribution to journalArticle

Nayak, Alpana ; Tsuruoka, Tohru ; Terabe, Kazuya ; Hasegawa, Tsuyoshi ; Aono, Masakazu. / Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch. In: Applied Physics Letters. 2011 ; Vol. 98, No. 23.
@article{d425bb4cde6d4e278aa1c453fee8d5dc,
title = "Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch",
abstract = "Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.",
author = "Alpana Nayak and Tohru Tsuruoka and Kazuya Terabe and Tsuyoshi Hasegawa and Masakazu Aono",
year = "2011",
month = "6",
day = "6",
doi = "10.1063/1.3597154",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "23",

}

TY - JOUR

T1 - Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch

AU - Nayak, Alpana

AU - Tsuruoka, Tohru

AU - Terabe, Kazuya

AU - Hasegawa, Tsuyoshi

AU - Aono, Masakazu

PY - 2011/6/6

Y1 - 2011/6/6

N2 - Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.

AB - Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.

UR - http://www.scopus.com/inward/record.url?scp=79959339647&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959339647&partnerID=8YFLogxK

U2 - 10.1063/1.3597154

DO - 10.1063/1.3597154

M3 - Article

AN - SCOPUS:79959339647

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233501

ER -