TY - JOUR
T1 - Theoretical investigation of kinetics of a Cu2 S -based gap-type atomic switch
AU - Nayak, Alpana
AU - Tsuruoka, Tohru
AU - Terabe, Kazuya
AU - Hasegawa, Tsuyoshi
AU - Aono, Masakazu
N1 - Funding Information:
Part of this work was conducted under the Key-Technology Research Project, “Atomic Switch Programmed Device,” supported by the MEXT, and the Strategic Japanese-German Cooperative Program, “Faradaic currents and ion transfer numbers in electrochemical atomic switches,” supported by JST. We would like to thank Prof. J. M. Ruitenbeek and Dr. M. Morales-Masis for fruitful discussions on the growth measurement.
PY - 2011/6/6
Y1 - 2011/6/6
N2 - Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.
AB - Atomic switch, operating by forming and dissolving a metal-protrusion in a nanogap, shows an exponentially large bias dependence and a faster switching with increasing temperature and decreasing off-resistance. These major characteristics are explained with a simple model where the electrochemical potential at the subsurface of solid-electrolyte electrode determines the precipitation rate of metal atoms and the electric-field in the nanogap strongly affects the formation of metal-protrusion. Theoretically calculated switching time, based on this model, well reproduced the measured properties of a Cu 2 S -based atomic switch as a function of bias, temperature and off-resistance, providing a significant physical insight into the mechanism.
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U2 - 10.1063/1.3597154
DO - 10.1063/1.3597154
M3 - Article
AN - SCOPUS:79959339647
SN - 0003-6951
VL - 98
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 23
M1 - 233501
ER -