Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

Kyozaburo Takeda, Kenji Shiraishi

Research output: Contribution to journalArticle

674 Citations (Scopus)


The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.

Original languageEnglish
Pages (from-to)14916-14922
Number of pages7
JournalPhysical Review B
Issue number20
Publication statusPublished - 1994 Jan 1


ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this