Theoretical possibility of stage corrugation in Si and Ge analogs of graphite

Kyozaburo Takeda, Kenji Shiraishi

Research output: Contribution to journalArticle

656 Citations (Scopus)

Abstract

The planarity of the aromatic stage of two-dimensional Si and Ge layers are theoretically investigated by first-principles total-energy calculations. While a C atom prefers to form the flat aromatic stage, i.e., graphite, Si and Ge prefer to form the corrugated aromatic stage. Si can be said to be the critical element by which the corrugated stage is formed.

Original languageEnglish
Pages (from-to)14916-14922
Number of pages7
JournalPhysical Review B
Volume50
Issue number20
DOIs
Publication statusPublished - 1994
Externally publishedYes

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Cite this

Theoretical possibility of stage corrugation in Si and Ge analogs of graphite. / Takeda, Kyozaburo; Shiraishi, Kenji.

In: Physical Review B, Vol. 50, No. 20, 1994, p. 14916-14922.

Research output: Contribution to journalArticle

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