Thermal and ion beam induced reactions in Ni thin films on BP(100)

Naoto Kobayashi, Y. Kumashiro, P. Revesz, Jian Li, J. W. Mayer

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Abstract

Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.

Original languageEnglish
Pages (from-to)1914-1915
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number19
DOIs
Publication statusPublished - 1989
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kobayashi, N., Kumashiro, Y., Revesz, P., Li, J., & Mayer, J. W. (1989). Thermal and ion beam induced reactions in Ni thin films on BP(100). Applied Physics Letters, 54(19), 1914-1915. https://doi.org/10.1063/1.101494