Thermal and ion beam induced reactions in Ni thin films on BP(100)

Naoto Kobayashi, Y. Kumashiro, P. Revesz, Jian Li, J. W. Mayer

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.

Original languageEnglish
Pages (from-to)1914-1915
Number of pages2
JournalApplied Physics Letters
Volume54
Issue number19
DOIs
Publication statusPublished - 1989
Externally publishedYes

Fingerprint

ion beams
thin films
bombardment
heavy ions
x ray diffraction
diffraction patterns
oxygen
ions
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Thermal and ion beam induced reactions in Ni thin films on BP(100). / Kobayashi, Naoto; Kumashiro, Y.; Revesz, P.; Li, Jian; Mayer, J. W.

In: Applied Physics Letters, Vol. 54, No. 19, 1989, p. 1914-1915.

Research output: Contribution to journalArticle

Kobayashi, N, Kumashiro, Y, Revesz, P, Li, J & Mayer, JW 1989, 'Thermal and ion beam induced reactions in Ni thin films on BP(100)', Applied Physics Letters, vol. 54, no. 19, pp. 1914-1915. https://doi.org/10.1063/1.101494
Kobayashi, Naoto ; Kumashiro, Y. ; Revesz, P. ; Li, Jian ; Mayer, J. W. / Thermal and ion beam induced reactions in Ni thin films on BP(100). In: Applied Physics Letters. 1989 ; Vol. 54, No. 19. pp. 1914-1915.
@article{9a7976bd34ba4f05800d4f71c5ea2662,
title = "Thermal and ion beam induced reactions in Ni thin films on BP(100)",
abstract = "Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.",
author = "Naoto Kobayashi and Y. Kumashiro and P. Revesz and Jian Li and Mayer, {J. W.}",
year = "1989",
doi = "10.1063/1.101494",
language = "English",
volume = "54",
pages = "1914--1915",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Thermal and ion beam induced reactions in Ni thin films on BP(100)

AU - Kobayashi, Naoto

AU - Kumashiro, Y.

AU - Revesz, P.

AU - Li, Jian

AU - Mayer, J. W.

PY - 1989

Y1 - 1989

N2 - Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.

AB - Thermal and ion beam induced reactions in Ni thin films on BP(100) have been investigated. For thermally annealed samples the reaction of the Ni layer on BP started at temperatures between 350 and 400°C and the formation of the crystalline phase corresponding to a composition of Ni4BP was observed at 450°C. It was observed that oxygen in the Ni layer could retard the progress of the reaction. The full reaction of the Ni layer with BP induced by energetic heavy ion bombardments (600 keV Xe) was observed at 230°C. The crystalline phase has the same composition and x-ray diffraction pattern for both thermal and ion-induced reactions.

UR - http://www.scopus.com/inward/record.url?scp=5844382590&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5844382590&partnerID=8YFLogxK

U2 - 10.1063/1.101494

DO - 10.1063/1.101494

M3 - Article

VL - 54

SP - 1914

EP - 1915

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

ER -