Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

Kwang Soo Seol, Toshifumi Karasawa, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    When ion-implanted thermal SiO2 films are irradiated by photons at 5.0 eV, photoluminescence (PL) appears at 4.3, 2.7, and 1.9 eV. These PLs are related with defects in the SiO2 films. When the SiO2 films are annealed at high temperatures, both the 4.3 and 2.7 eV PL intensities decrease gradually with an increase in the annealing temperature and disappear at 500°C, while the 1.9 eV PL increases or stays constant up to 400°C and suddenly disappears at 500°C. Such annealing behavior is not influenced by the annealing atmosphere. In the case of the films degassed in high vacuum before implantation, it is observed that the PL bands survive the annealing at 500°C. This result suggests that dissolved gases in the film play an important role in the annihilation of defects induced by ion implantation.

    Original languageEnglish
    Pages (from-to)193-195
    Number of pages3
    JournalMicroelectronic Engineering
    Volume36
    Issue number1-4
    Publication statusPublished - 1997 Jun

    Fingerprint

    Ion implantation
    ion implantation
    Annealing
    Photoluminescence
    Defects
    annealing
    defects
    photoluminescence
    dissolved gases
    high vacuum
    guy wires
    implantation
    Photons
    Gases
    Hot Temperature
    Vacuum
    Ions
    atmospheres
    Temperature
    photons

    ASJC Scopus subject areas

    • Hardware and Architecture
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films
    • Atomic and Molecular Physics, and Optics

    Cite this

    Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films. / Seol, Kwang Soo; Karasawa, Toshifumi; Ohki, Yoshimichi; Nishikawa, Hiroyuki; Takiyama, Makoto.

    In: Microelectronic Engineering, Vol. 36, No. 1-4, 06.1997, p. 193-195.

    Research output: Contribution to journalArticle

    Seol, KS, Karasawa, T, Ohki, Y, Nishikawa, H & Takiyama, M 1997, 'Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films', Microelectronic Engineering, vol. 36, no. 1-4, pp. 193-195.
    Seol, Kwang Soo ; Karasawa, Toshifumi ; Ohki, Yoshimichi ; Nishikawa, Hiroyuki ; Takiyama, Makoto. / Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films. In: Microelectronic Engineering. 1997 ; Vol. 36, No. 1-4. pp. 193-195.
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    abstract = "When ion-implanted thermal SiO2 films are irradiated by photons at 5.0 eV, photoluminescence (PL) appears at 4.3, 2.7, and 1.9 eV. These PLs are related with defects in the SiO2 films. When the SiO2 films are annealed at high temperatures, both the 4.3 and 2.7 eV PL intensities decrease gradually with an increase in the annealing temperature and disappear at 500°C, while the 1.9 eV PL increases or stays constant up to 400°C and suddenly disappears at 500°C. Such annealing behavior is not influenced by the annealing atmosphere. In the case of the films degassed in high vacuum before implantation, it is observed that the PL bands survive the annealing at 500°C. This result suggests that dissolved gases in the film play an important role in the annihilation of defects induced by ion implantation.",
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    AU - Nishikawa, Hiroyuki

    AU - Takiyama, Makoto

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