Thermal bond reliability of high reliability gold alloy wires for automotive IC's

Tomohiro Uno*, Keiichi Kimura, Kohei Tatsumi

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

Semiconductors for high temperature become increasingly important for automotive applications and power devices. High thermal interconnection technology is requested. Commercial 4N gold wire (purity>99.99%) caused a bond corrosion problem at elevated temperatures. Thermal bond reliability of gold alloy wire was investigated with HP alloy wire and LP alloy wire which include high and low concentration palladium, respectively. The bond strength of HP wire declined faster than 4N wire after aging at 423K. There were Pd-enriched compound and cracking at bond interface of HP wire. LP wire can exceed the target of 423K-2000hr for reliability testing. The alloy wire was also suitable for fine pitch bonding. In this paper, bond failure mechanism was clarified and high thermal reliability bonding wires developed were shown.

Original languageEnglish
Title of host publicationProceedings - 2005 International Symposium on Microelectronics, IMAPS 2005
Pages557-565
Number of pages9
Publication statusPublished - 2005 Dec 1
Externally publishedYes
Event38th International Symposium on Microelectronics, IMAPS 2005 - Philadelphia, PA, United States
Duration: 2005 Sept 252005 Sept 29

Publication series

NameProceedings - 2005 International Symposium on Microelectronics, IMAPS 2005

Conference

Conference38th International Symposium on Microelectronics, IMAPS 2005
Country/TerritoryUnited States
CityPhiladelphia, PA
Period05/9/2505/9/29

Keywords

  • Automotive IC
  • Bonding wire
  • Corrosion
  • Intermetallic compound
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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