TY - JOUR
T1 - Thermal boundary resistance of W/Al2O3 interface in W/Al2O3/W three-layered thin film and its dependence on morphology
AU - Kawasaki, Shizuka
AU - Yamashita, Yuichiro
AU - Oka, Nobuto
AU - Yagi, Takashi
AU - Jia, Junjun
AU - Taketoshi, Naoyuki
AU - Baba, Tetsuya
AU - Shigesato, Yuzo
PY - 2013/6
Y1 - 2013/6
N2 - We investigated the dependence of the thermal boundary resistance of the W/Al2O3 interface in W/Al2O3/W three-layered thin films on the interface morphology. The layered structures, Al2O3 thin layers with thicknesses from 1 to 50nm covered by top and bottom W layers with a thickness of 100 nm, were fabricated by magnetron sputtering using a W target (99.99%) and an Al2O 3 target (99.99%). The fabrication of polycrystalline W and amorphous Al2O3 films was confirmed by structural analysis. The morphology of the bottom W layer/Al2O3 layer and Al 2O3 layer/top W layer interfaces showed a wavelike structure with a roughness of about 1 nm. Thermophysical properties and thermal boundary resistance were measured by a pulsed light heating thermoreflectance technique. The thermal boundary resistance of the W/Al2O3 interface was 1.9 × 10-9 m2KW-1, which corresponds to the thermal resistance of a 3.7-nm-thick Al2O 3 film or a 120-nm-thick W film.
AB - We investigated the dependence of the thermal boundary resistance of the W/Al2O3 interface in W/Al2O3/W three-layered thin films on the interface morphology. The layered structures, Al2O3 thin layers with thicknesses from 1 to 50nm covered by top and bottom W layers with a thickness of 100 nm, were fabricated by magnetron sputtering using a W target (99.99%) and an Al2O 3 target (99.99%). The fabrication of polycrystalline W and amorphous Al2O3 films was confirmed by structural analysis. The morphology of the bottom W layer/Al2O3 layer and Al 2O3 layer/top W layer interfaces showed a wavelike structure with a roughness of about 1 nm. Thermophysical properties and thermal boundary resistance were measured by a pulsed light heating thermoreflectance technique. The thermal boundary resistance of the W/Al2O3 interface was 1.9 × 10-9 m2KW-1, which corresponds to the thermal resistance of a 3.7-nm-thick Al2O 3 film or a 120-nm-thick W film.
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U2 - 10.7567/JJAP.52.065802
DO - 10.7567/JJAP.52.065802
M3 - Article
AN - SCOPUS:84881078774
SN - 0021-4922
VL - 52
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 6 PART 1
M1 - 065802
ER -