Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

Keita Sirakami, Kenji Kobayashi, Hiroshi Kikuchi, Akio Fuwa

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).

    Original languageEnglish
    Pages (from-to)751-756
    Number of pages6
    JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
    Volume60
    Issue number8
    Publication statusPublished - 1996

    Fingerprint

    Mass spectrometers
    mass spectrometers
    thermal decomposition
    Pyrolysis
    Polymers
    Reaction intermediates
    Reaction products
    Precipitates
    Adsorption
    Substrates
    reaction intermediates
    tetraethoxysilane
    reaction products
    precipitates
    Temperature
    adsorption

    Keywords

    • Kinetics mass spectrometer
    • Tetraethoxysilane
    • Thermal decomposition

    ASJC Scopus subject areas

    • Metals and Alloys

    Cite this

    Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer. / Sirakami, Keita; Kobayashi, Kenji; Kikuchi, Hiroshi; Fuwa, Akio.

    In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 60, No. 8, 1996, p. 751-756.

    Research output: Contribution to journalArticle

    Sirakami, Keita ; Kobayashi, Kenji ; Kikuchi, Hiroshi ; Fuwa, Akio. / Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer. In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals. 1996 ; Vol. 60, No. 8. pp. 751-756.
    @article{17d3f419c9cc43fea1ec29bc8e6087bc,
    title = "Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer",
    abstract = "Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).",
    keywords = "Kinetics mass spectrometer, Tetraethoxysilane, Thermal decomposition",
    author = "Keita Sirakami and Kenji Kobayashi and Hiroshi Kikuchi and Akio Fuwa",
    year = "1996",
    language = "English",
    volume = "60",
    pages = "751--756",
    journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",
    issn = "0021-4876",
    publisher = "Japan Institute of Metals (JIM)",
    number = "8",

    }

    TY - JOUR

    T1 - Thermal decomposition of tetraethoxysilane studied by atmospheric mass-spectrometer

    AU - Sirakami, Keita

    AU - Kobayashi, Kenji

    AU - Kikuchi, Hiroshi

    AU - Fuwa, Akio

    PY - 1996

    Y1 - 1996

    N2 - Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).

    AB - Experimential observation of SiO2 precipitation reaction on a Si substrate through thermal decomposition of TEOS was pursued as functions of temperature, TEOS concentration and residence time where the gaseous reaction products identified by the atmospheric mass-spectrometer are C2H5 and C2H5OH, from which the following reaction scheme can be proposed: (1) The overall thermal decomposition reaction of TEOS to precipitate SiO2(s) can be expressed as follows: SiO (OC2H5)4(g) → SiO2(s) +2C2H4(g) +2C2H5OH (g) (2) The gaseous reaction intermediate species observed is SiO (OC2H5)2, which may be produced by the following reaction: Si (OC2H5)4(g) → SiO(OC2H5)2(g) +C2H4(g) +C2H5OH(g) (3) The oder of reaction with respect to the TEOS concentration obtained experimentally is from 0.2 to 0.5. (4) The above-mentioned experimental observation, in which the step (c) is the rate controlling step and the oder of reaction is (1/3), leads to (a) the thermal decomposition of TEOS to produce the intermediate: Si(OC2H5)4(g) → SiO (OC2H5)2(g) +C2H4(g) + C2H5OH(g) (b) the adsorption reaction of the intermediate: SiO(OC2H5)2(g) + * → SiO(OC2H5) * (c) the SiO2(s) precipitation from the adsorpted speciees: SiO(OC2H5)2*→SiO2(s) +C2H4(g) +C2H5OH(g).

    KW - Kinetics mass spectrometer

    KW - Tetraethoxysilane

    KW - Thermal decomposition

    UR - http://www.scopus.com/inward/record.url?scp=0030206581&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0030206581&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0030206581

    VL - 60

    SP - 751

    EP - 756

    JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

    JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

    SN - 0021-4876

    IS - 8

    ER -