Thermal rectification in the vicinity of a structural phase transition

Wataru Kobayashi; Daisuke Sawaki; Tsubasa Omura; Takuro Katsufuji; Yutaka Moritomo; Ichiro Terasaki

doi:10.1143/APEX.5.027302

Thermal rectification in the vicinity of a structural phase transition

Wataru Kobayashi^*, Daisuke Sawaki, Tsubasa Omura, Takuro Katsufuji, Yutaka Moritomo, Ichiro Terasaki

^*Corresponding author for this work

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

We have fabricated an oxide thermal rectifier made of La _1:98Nd _0:02CuO ₄ and MnV ₂O ₄. By utilizing a jump of a thermal conductivity originated in the structural phase transition accompanied by the orbital ordering in MnV ₂O ₄, a rectifying coefficient of 1.14 has been achieved in the presence of a small temperature difference of 2 K. A thermal rectifier operating under a small temperature difference will play an important role for realizing heatcurrent control in electronic devices.

Original language	English
Article number	027302
Journal	Applied Physics Express
Volume	5
Issue number	2
DOIs	https://doi.org/10.1143/APEX.5.027302
Publication status	Published - 2012 Feb

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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AU - Kobayashi, Wataru

AU - Sawaki, Daisuke

AU - Omura, Tsubasa

AU - Katsufuji, Takuro

AU - Moritomo, Yutaka

AU - Terasaki, Ichiro

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AB - We have fabricated an oxide thermal rectifier made of La 1:98Nd 0:02CuO 4 and MnV 2O 4. By utilizing a jump of a thermal conductivity originated in the structural phase transition accompanied by the orbital ordering in MnV 2O 4, a rectifying coefficient of 1.14 has been achieved in the presence of a small temperature difference of 2 K. A thermal rectifier operating under a small temperature difference will play an important role for realizing heatcurrent control in electronic devices.

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Thermal rectification in the vicinity of a structural phase transition

Abstract

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