Thermally and environmentally stable carrier doping using a solution method in carbon nanotube films

Yorihiko Sasaki, Haruya Okimoto, Kenji Yoshida, Yasuichi Ono, Yoshihiro Iwasa, Taishi Takenobu

    Research output: Contribution to journalArticle

    6 Citations (Scopus)

    Abstract

    In the present paper, we report the thermal stability of a single-walled carbon nanotube (SWCNT) film that was doped using tetrafluorotetracyanop- quinodimethane (F4TCNQ). The SWCNTs were doped using a vapor method and a solution method, and their thermostabilities were characterized using a gas chromatography/mass spectrometer (GC/MS) and resistance measurements. These measurements clearly demonstrated the high thermal stability of F 4TCNQ and the strong charge-transfer interaction between the SWCNTs and the dopants. As a result, we successfully observed an excellent long-term (longer than 500 h) thermal resistance up to 150 °C, which is a sufficient level of stability for the practical use of this dopant.

    Original languageEnglish
    Article number085102
    JournalApplied Physics Express
    Volume4
    Issue number8
    DOIs
    Publication statusPublished - 2011 Aug

    ASJC Scopus subject areas

    • Engineering(all)
    • Physics and Astronomy(all)

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