Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

G. Kudlek; J. Hollandt; N. Presser; J. Gutowski; S. M. Durbin; D. R. Menke; M. Kobayashi; R. L. Gunshor

doi:10.1063/1.346475

Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

G. Kudlek^*, J. Hollandt, N. Presser, J. Gutowski, S. M. Durbin, D. R. Menke, M. Kobayashi, R. L. Gunshor

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

Original language	English
Pages (from-to)	2532-2534
Number of pages	3
Journal	Journal of Applied Physics
Volume	68
Issue number	5
DOIs	https://doi.org/10.1063/1.346475
Publication status	Published - 1990 Dec 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.346475

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title = "Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy",

abstract = "For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.",

author = "G. Kudlek and J. Hollandt and N. Presser and J. Gutowski and Durbin, {S. M.} and Menke, {D. R.} and M. Kobayashi and Gunshor, {R. L.}",

year = "1990",

month = dec,

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doi = "10.1063/1.346475",

language = "English",

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T1 - Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

AU - Kudlek, G.

AU - Hollandt, J.

AU - Presser, N.

AU - Gutowski, J.

AU - Durbin, S. M.

AU - Menke, D. R.

AU - Kobayashi, M.

AU - Gunshor, R. L.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

AB - For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

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DO - 10.1063/1.346475

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VL - 68

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EP - 2534

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

ER -

Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

Abstract

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