Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy

G. Kudlek, J. Hollandt, N. Presser, J. Gutowski, S. M. Durbin, D. R. Menke, Masakazu Kobayashi, R. L. Gunshor

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Abstract

For the first time, ZnSe epitaxial layers grown by molecular-beam epitaxy are shown to exhibit large contrast, low power, and extremely long-term stable thermally induced absorptive optical bistability. It is observed over a wide temperature range between 169 K and RT, with a strongly variable loop width and a switch-back adjustable to be less than 50% of the respective switch-down value. Critical slowing down as well as switch-down times are studied in dependence of the excess over the switch-down intensity values.

Original languageEnglish
Pages (from-to)2532-2534
Number of pages3
JournalJournal of Applied Physics
Volume68
Issue number5
DOIs
Publication statusPublished - 1990
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Kudlek, G., Hollandt, J., Presser, N., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M., & Gunshor, R. L. (1990). Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy. Journal of Applied Physics, 68(5), 2532-2534. https://doi.org/10.1063/1.346475