Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato, Akira Masuzawa, Takashi Noma, Kwang Soo Seol, Yoshimichi Ohki

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    The effect of thermal annealing on the photoluminescence around 2.2-2.9 eV in hydrogenated amorphous silicon oxynitride films was investigated. The luminescence intensity increases monotonically with an increase in the annealing temperature for the samples with lower nitrogen contents (N/O = 0.06, 0.10 and 0.12). It shows a similar increase up to 500°C, while it decreases abruptly above 500°C for the samples with higher nitrogen contents (N/O = 0.14 and 0.18). The density of silicon dangling bonds depends on the annealing temperature in a manner opposite to that of the luminescence intensity in all the temperature region. Based on this correlation, it is thought that the silicon dangling bonds act as the quenching centre. Infrared absorption spectroscopy indicated that the precursor of silicon dangling bonds was the Si-H bond. Hydrogen was released at temperatures above 500°C from Si-H bonds, resulting in a large number of silicon dangling bonds that quench the luminescence.

    Original languageEnglish
    Pages (from-to)6541-6549
    Number of pages9
    JournalJournal of Physics Condensed Matter
    Volume13
    Issue number30
    DOIs
    Publication statusPublished - 2001 Jul 30

    Fingerprint

    Dangling bonds
    oxynitrides
    Silicon
    Amorphous silicon
    amorphous silicon
    Quenching
    Photoluminescence
    quenching
    photoluminescence
    Luminescence
    silicon
    Annealing
    luminescence
    annealing
    Nitrogen
    nitrogen
    Hydrogen
    Temperature
    temperature
    Infrared absorption

    ASJC Scopus subject areas

    • Condensed Matter Physics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride. / Kato, Hiromitsu; Masuzawa, Akira; Noma, Takashi; Seol, Kwang Soo; Ohki, Yoshimichi.

    In: Journal of Physics Condensed Matter, Vol. 13, No. 30, 30.07.2001, p. 6541-6549.

    Research output: Contribution to journalArticle

    Kato, Hiromitsu ; Masuzawa, Akira ; Noma, Takashi ; Seol, Kwang Soo ; Ohki, Yoshimichi. / Thermally induced photoluminescence quenching centre in hydrogenated amorphous silicon oxynitride. In: Journal of Physics Condensed Matter. 2001 ; Vol. 13, No. 30. pp. 6541-6549.
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    AU - Noma, Takashi

    AU - Seol, Kwang Soo

    AU - Ohki, Yoshimichi

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    AB - The effect of thermal annealing on the photoluminescence around 2.2-2.9 eV in hydrogenated amorphous silicon oxynitride films was investigated. The luminescence intensity increases monotonically with an increase in the annealing temperature for the samples with lower nitrogen contents (N/O = 0.06, 0.10 and 0.12). It shows a similar increase up to 500°C, while it decreases abruptly above 500°C for the samples with higher nitrogen contents (N/O = 0.14 and 0.18). The density of silicon dangling bonds depends on the annealing temperature in a manner opposite to that of the luminescence intensity in all the temperature region. Based on this correlation, it is thought that the silicon dangling bonds act as the quenching centre. Infrared absorption spectroscopy indicated that the precursor of silicon dangling bonds was the Si-H bond. Hydrogen was released at temperatures above 500°C from Si-H bonds, resulting in a large number of silicon dangling bonds that quench the luminescence.

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