Thermodynamic analysis for crystal growth of the III-V compound

K. Yamaguchi, Y. Takeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures or arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and 1336K. These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by authors.

Original languageEnglish
Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages209-212
Number of pages4
Publication statusPublished - 2000 Dec 1
Externally publishedYes
EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA, United States
Duration: 2000 Nov 52000 Nov 8

Publication series

NameProceedings of the Second International Conference on Processing Materials for Properties

Conference

ConferenceProceedings of the Second International Conference on Processing Materials for Properties
CountryUnited States
CitySan Francisco, CA
Period00/11/500/11/8

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Yamaguchi, K., & Takeda, Y. (2000). Thermodynamic analysis for crystal growth of the III-V compound. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 209-212). (Proceedings of the Second International Conference on Processing Materials for Properties).