Thermodynamic analysis for crystal growth of the III-V compound

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Partial pressure - temperature - composition correlation diagrams of the Ga-As, In-As, Ga-P and In-P systems were contracted based on the obtained experimental data of the phase diagram and thermodynamic properties for the III-V systems. The total vapor pressures or arsenic or phosphorus at melting point of GaAs, InAs, GaP and InP were determined as 101, 10.1, 1510 and 253 kPa, respectively, at the corresponding melting points of 1509, 1211, 1739 and 1336K. These diagrams are applied to the analysis of the horizontal Bridgman method and the liquid phase epitaxial growth technique. On the other hand, the analysis of the equilibrium state of the chloride-CVD process was carried out using the data of the Gibbs energy of the compounds obtained by authors.

Original languageEnglish
Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
Pages209-212
Number of pages4
Publication statusPublished - 2000
Externally publishedYes
EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
Duration: 2000 Nov 52000 Nov 8

Other

OtherProceedings of the Second International Conference on Processing Materials for Properties
CitySan Francisco, CA
Period00/11/500/11/8

Fingerprint

Crystal growth
Melting point
Thermodynamics
Liquid phase epitaxy
Crystal growth from melt
Gibbs free energy
Arsenic
Vapor pressure
Partial pressure
Phase diagrams
Phosphorus
Chemical vapor deposition
Thermodynamic properties
Chemical analysis
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Yamaguchi, K., & Takeda, Y. (2000). Thermodynamic analysis for crystal growth of the III-V compound. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 209-212)

Thermodynamic analysis for crystal growth of the III-V compound. / Yamaguchi, Katsunori; Takeda, Y.

Proceedings of the Second International Conference on Processing Materials for Properties. ed. / B. Mishra; C, Yamauchi; B. Mishra; C. Yamauchi. 2000. p. 209-212.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Yamaguchi, K & Takeda, Y 2000, Thermodynamic analysis for crystal growth of the III-V compound. in B Mishra, C Yamauchi, B Mishra & C Yamauchi (eds), Proceedings of the Second International Conference on Processing Materials for Properties. pp. 209-212, Proceedings of the Second International Conference on Processing Materials for Properties, San Francisco, CA, 00/11/5.
Yamaguchi K, Takeda Y. Thermodynamic analysis for crystal growth of the III-V compound. In Mishra B, Yamauchi C, Mishra B, Yamauchi C, editors, Proceedings of the Second International Conference on Processing Materials for Properties. 2000. p. 209-212
Yamaguchi, Katsunori ; Takeda, Y. / Thermodynamic analysis for crystal growth of the III-V compound. Proceedings of the Second International Conference on Processing Materials for Properties. editor / B. Mishra ; C, Yamauchi ; B. Mishra ; C. Yamauchi. 2000. pp. 209-212
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