Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems

Katsunori Yamaguchi, K. Itagaki, Y. A. Chang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Thermodynamic and phase diagram data are used to optimize the thermodynamic model parameter values of the liquid phases in four III-V binary systems: In-P, Ga-As, In-As and Al-Sb. An associated solution model is used to describe the thermodynamic properties of the liquid phases and the III-V compound semiconductors are taken to be stoichiometric (or line) compounds. For each of the binary systems, a set of thermodynamic parameters for the liquid and compound semiconductors are obtained. Using these values, the calculated phase diagrams are in agreement with the experimentally determined ones. Moreover, the model-calculated thermodynamic values also in agreement with the experimentally determined values.

Original languageEnglish
Pages (from-to)439-446
Number of pages8
JournalCalphad: Computer Coupling of Phase Diagrams and Thermochemistry
Volume20
Issue number4
DOIs
Publication statusPublished - 1996 Dec
Externally publishedYes

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Thermodynamics
Phase diagrams
Liquids
Thermodynamic properties
Semiconductor materials
III-V semiconductors

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Computer Science Applications

Cite this

Thermodynamic analysis of the In-P, Ga-As, In-As and Al-Sb systems. / Yamaguchi, Katsunori; Itagaki, K.; Chang, Y. A.

In: Calphad: Computer Coupling of Phase Diagrams and Thermochemistry, Vol. 20, No. 4, 12.1996, p. 439-446.

Research output: Contribution to journalArticle

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