Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC

Taka Narumi, Sakiko Kawanishi, Takeshi Yoshikawa, Kazuhiko Kusunoki, Kazuhito Kamei, Hironori Daikoku, Hidemitsu Sakamoto

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Solution growth of SiC is currently regarded as a promising process to produce high-quality SiC crystals. To date, Si-Cr, Si-Ti, and Fe-Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and composition is still needed to maximize the growth rate of high-quality SiC crystals. In this paper, to clarify the features of respective solvents from the viewpoint of the solubility of carbon, the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems were evaluated by thermodynamic analysis. Phase relations in the respective ternary systems were investigated by the calculation of phase diagrams method. In addition, the solubility of carbon in Si-Cr, Si-Ti, and Fe-Si alloys at saturation with SiC was measured and its consistency with the estimated results was examined. Correlation of the experimental growth rate of SiC using Si-Cr, Si-Ti, and Fe-Si solvents was analyzed in terms of the supersaturation of carbon in each solution evaluated from the estimated temperature dependence of carbon solubility. Rate determinining step for solution growth was presumed to be mass transfer in the liquid phase.

Original languageEnglish
Article number22407
JournalJournal of Crystal Growth
Volume408
DOIs
Publication statusPublished - 2014 Dec 15
Externally publishedYes

Fingerprint

Carbon
Thermodynamics
thermodynamics
Solubility
evaluation
solubility
carbon
Crystals
Supersaturation
Ternary systems
Phase diagrams
ternary systems
supersaturation
Mass transfer
mass transfer
crystals
liquid phases
phase diagrams
titanium carbide
Liquids

Keywords

  • A1: phase equilibria
  • A1: solubility
  • A1: supersaturation
  • A2: solution growth
  • B1: SiC

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Narumi, T., Kawanishi, S., Yoshikawa, T., Kusunoki, K., Kamei, K., Daikoku, H., & Sakamoto, H. (2014). Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC. Journal of Crystal Growth, 408, [22407]. https://doi.org/10.1016/j.jcrysgro.2014.08.027

Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC. / Narumi, Taka; Kawanishi, Sakiko; Yoshikawa, Takeshi; Kusunoki, Kazuhiko; Kamei, Kazuhito; Daikoku, Hironori; Sakamoto, Hidemitsu.

In: Journal of Crystal Growth, Vol. 408, 22407, 15.12.2014.

Research output: Contribution to journalArticle

Narumi, T, Kawanishi, S, Yoshikawa, T, Kusunoki, K, Kamei, K, Daikoku, H & Sakamoto, H 2014, 'Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC', Journal of Crystal Growth, vol. 408, 22407. https://doi.org/10.1016/j.jcrysgro.2014.08.027
Narumi, Taka ; Kawanishi, Sakiko ; Yoshikawa, Takeshi ; Kusunoki, Kazuhiko ; Kamei, Kazuhito ; Daikoku, Hironori ; Sakamoto, Hidemitsu. / Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC. In: Journal of Crystal Growth. 2014 ; Vol. 408.
@article{dd679698fe0942e48bcb0d6d42870a7a,
title = "Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC",
abstract = "Solution growth of SiC is currently regarded as a promising process to produce high-quality SiC crystals. To date, Si-Cr, Si-Ti, and Fe-Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and composition is still needed to maximize the growth rate of high-quality SiC crystals. In this paper, to clarify the features of respective solvents from the viewpoint of the solubility of carbon, the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems were evaluated by thermodynamic analysis. Phase relations in the respective ternary systems were investigated by the calculation of phase diagrams method. In addition, the solubility of carbon in Si-Cr, Si-Ti, and Fe-Si alloys at saturation with SiC was measured and its consistency with the estimated results was examined. Correlation of the experimental growth rate of SiC using Si-Cr, Si-Ti, and Fe-Si solvents was analyzed in terms of the supersaturation of carbon in each solution evaluated from the estimated temperature dependence of carbon solubility. Rate determinining step for solution growth was presumed to be mass transfer in the liquid phase.",
keywords = "A1: phase equilibria, A1: solubility, A1: supersaturation, A2: solution growth, B1: SiC",
author = "Taka Narumi and Sakiko Kawanishi and Takeshi Yoshikawa and Kazuhiko Kusunoki and Kazuhito Kamei and Hironori Daikoku and Hidemitsu Sakamoto",
year = "2014",
month = "12",
day = "15",
doi = "10.1016/j.jcrysgro.2014.08.027",
language = "English",
volume = "408",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Thermodynamic evaluation of the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems for rapid solution growth of SiC

AU - Narumi, Taka

AU - Kawanishi, Sakiko

AU - Yoshikawa, Takeshi

AU - Kusunoki, Kazuhiko

AU - Kamei, Kazuhito

AU - Daikoku, Hironori

AU - Sakamoto, Hidemitsu

PY - 2014/12/15

Y1 - 2014/12/15

N2 - Solution growth of SiC is currently regarded as a promising process to produce high-quality SiC crystals. To date, Si-Cr, Si-Ti, and Fe-Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and composition is still needed to maximize the growth rate of high-quality SiC crystals. In this paper, to clarify the features of respective solvents from the viewpoint of the solubility of carbon, the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems were evaluated by thermodynamic analysis. Phase relations in the respective ternary systems were investigated by the calculation of phase diagrams method. In addition, the solubility of carbon in Si-Cr, Si-Ti, and Fe-Si alloys at saturation with SiC was measured and its consistency with the estimated results was examined. Correlation of the experimental growth rate of SiC using Si-Cr, Si-Ti, and Fe-Si solvents was analyzed in terms of the supersaturation of carbon in each solution evaluated from the estimated temperature dependence of carbon solubility. Rate determinining step for solution growth was presumed to be mass transfer in the liquid phase.

AB - Solution growth of SiC is currently regarded as a promising process to produce high-quality SiC crystals. To date, Si-Cr, Si-Ti, and Fe-Si solvents have been used for rapid solution growth of SiC. However, optimization of the solvent system and composition is still needed to maximize the growth rate of high-quality SiC crystals. In this paper, to clarify the features of respective solvents from the viewpoint of the solubility of carbon, the C-Cr-Si, C-Ti-Si, and C-Fe-Si systems were evaluated by thermodynamic analysis. Phase relations in the respective ternary systems were investigated by the calculation of phase diagrams method. In addition, the solubility of carbon in Si-Cr, Si-Ti, and Fe-Si alloys at saturation with SiC was measured and its consistency with the estimated results was examined. Correlation of the experimental growth rate of SiC using Si-Cr, Si-Ti, and Fe-Si solvents was analyzed in terms of the supersaturation of carbon in each solution evaluated from the estimated temperature dependence of carbon solubility. Rate determinining step for solution growth was presumed to be mass transfer in the liquid phase.

KW - A1: phase equilibria

KW - A1: solubility

KW - A1: supersaturation

KW - A2: solution growth

KW - B1: SiC

UR - http://www.scopus.com/inward/record.url?scp=84930686237&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84930686237&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2014.08.027

DO - 10.1016/j.jcrysgro.2014.08.027

M3 - Article

AN - SCOPUS:84930686237

VL - 408

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 22407

ER -