Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages283-285
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

Fingerprint

Melting
Wire
Cooling
Experiments
Seed
Molecular dynamics
Thermal conductivity
Heating
Computer simulation

Keywords

  • Peltier cooling
  • SiGe
  • thermal conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Hashimoto, S., Takahashi, K., Oba, S., Terada, T., Ogasawara, M., Tomita, M., ... Watanabe, T. (2018). Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 283-285). [8421517] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421517

Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. / Hashimoto, Shuichiro; Takahashi, Kouta; Oba, Shunsuke; Terada, Takuya; Ogasawara, Masataka; Tomita, Motohiro; Kurosawa, Masashi; Watanabe, Takanobu.

2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 283-285 8421517.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hashimoto, S, Takahashi, K, Oba, S, Terada, T, Ogasawara, M, Tomita, M, Kurosawa, M & Watanabe, T 2018, Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421517, Institute of Electrical and Electronics Engineers Inc., pp. 283-285, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 18/3/13. https://doi.org/10.1109/EDTM.2018.8421517
Hashimoto S, Takahashi K, Oba S, Terada T, Ogasawara M, Tomita M et al. Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 283-285. 8421517 https://doi.org/10.1109/EDTM.2018.8421517
Hashimoto, Shuichiro ; Takahashi, Kouta ; Oba, Shunsuke ; Terada, Takuya ; Ogasawara, Masataka ; Tomita, Motohiro ; Kurosawa, Masashi ; Watanabe, Takanobu. / Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 283-285
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