Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment

Shuichiro Hashimoto, Kouta Takahashi, Shunsuke Oba, Takuya Terada, Masataka Ogasawara, Motohiro Tomita, Masashi Kurosawa, Takanobu Watanabe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We performed a Peltier cooling experiment using SiGe wires fabricated by rapid-melting-growth (RMG) method. Thermal conductivity κ of SiGe wires estimated from the Peltier heating/cooling rate showed a significant dependence on the RMG process; the growth into one direction from a Si seed island exhibit a smaller κ than the bilateral growth. According to molecular dynamics simulation, the κ hardly depend on the compositional distribution, indicating the impact of the difference in the RMG processes.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages283-285
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - 2018 Jul 26
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: 2018 Mar 132018 Mar 16

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
CountryJapan
CityKobe
Period18/3/1318/3/16

Keywords

  • Peltier cooling
  • SiGe
  • thermal conductivity

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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    Hashimoto, S., Takahashi, K., Oba, S., Terada, T., Ogasawara, M., Tomita, M., Kurosawa, M., & Watanabe, T. (2018). Thermoelectric Characteristics of Rapid-Melting-Grown SiGe Wires Measured by Peltier Cooling Experiment. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 283-285). [8421517] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421517