Thermoelectric properties in the misfit-layered-cobalt oxides [Bi 2A2O4][CoO2]b1/b2 (A=Ca, Sr, Ba, b1/b2=1.65, 1.82, 1.98) single crystals

Wataru Kobayashi, S. Hébert, H. Muguerra, D. Grebille, D. Pelloquin, A. Maignan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

22 Citations (Scopus)

Abstract

Single crystals of different phases of misfit cobalt oxides have been synthesized. Using these materials, the intrinsic power factor has been determined. By combining thermopower 5 and Hall coefficient measurements, we will show how S can be tuned by doping in this family of materials, the doping being strongly dependent on the misfit ratio p=b1/b2 ([Bi2A2O4][CoO2]b1/b2 with A=Ca, Sr, Ba, b1/b2=1.65, 1.82, 1.98). The in-plane resistivity also strongly depends on the doping : the more metallic samples are obtained for the largest carrier concentration, i.e. the smaller S value. The combination of these two factors leads to an important conclusion that the power factor is independent of the doping in these Bi-based materials converging to a unique value of 2.2±0.3 μW/cmK2 at room temperature, which is not so trivial. We will discuss the origin of the almost unique value of 2.2±0.3 μW/cmK2.

Original languageEnglish
Title of host publicationProceedings ICT'07 - 26th International Conference on Thermoelectrics
Pages117-120
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
EventICT'07 - 26th International Conference on Thermoelectrics - Jeju, Korea, Republic of
Duration: 2007 Jun 32007 Jun 7

Other

OtherICT'07 - 26th International Conference on Thermoelectrics
CountryKorea, Republic of
CityJeju
Period07/6/307/6/7

ASJC Scopus subject areas

  • Engineering(all)

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    Kobayashi, W., Hébert, S., Muguerra, H., Grebille, D., Pelloquin, D., & Maignan, A. (2007). Thermoelectric properties in the misfit-layered-cobalt oxides [Bi 2A2O4][CoO2]b1/b2 (A=Ca, Sr, Ba, b1/b2=1.65, 1.82, 1.98) single crystals. In Proceedings ICT'07 - 26th International Conference on Thermoelectrics (pp. 117-120). [4569437] https://doi.org/10.1109/ICT.2007.4569437