Thick and large area PIN diodes for the hard X-ray astronomy in the 10-60 keV range are developed. To cover this energy range in a room temperature and in a low background environment, Si PIN junction diodes of 2 mm in thickness with 2.5 cm2 in effective area were developed, and will be used in the bottom of the Phoswich Hard X-ray Detector (HXD), on-board the ASTRO-E satellite. Problems related to a high purity Si and a thick depletion layer during our development and performance of the PIN diodes are presented in detail.
|Number of pages||6|
|Journal||Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment|
|Publication status||Published - 1999 Oct 21|
|Event||Proceedings of the 1998 7th International Conference on Solid State Detectors - Nara, Jpn|
Duration: 1998 Dec 4 → 1998 Dec 6
ASJC Scopus subject areas
- Nuclear and High Energy Physics