Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

A. Hiraiwa, D. Ishikawa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We experimentally investigated the breakdown lifetime of NMOS under inversion condition as a function of gate voltage by long-time-span tests and new power-law criteria. The lifetime followed the 1/E-rule above ∼4 V, but the power-law below ∼4 V. The power index decreased when the oxide became thinner. We observed no trace of the E-rule. We propose to adopt the powerlaw and the 1/E-rule in the reliability projection of core and I/O oxides, respectively. We need to appropriately consider the direct tunneling to model the breakdown below ∼4 V. The hole injection still seems to be playing an important role.

Original languageEnglish
Pages (from-to)374-377
Number of pages4
JournalMicroelectronic Engineering
Volume80
Issue numberSUPPL.
DOIs
Publication statusPublished - 2005 Jun 17
Externally publishedYes

Fingerprint

Electric breakdown
Oxides
breakdown
oxides
life (durability)
Electric potential
projection
inversions
injection
electric potential

Keywords

  • 1/E-rule
  • Breakdown
  • Hole
  • Inversion
  • NMOS
  • Oxide
  • Power-law

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides. / Hiraiwa, A.; Ishikawa, D.

In: Microelectronic Engineering, Vol. 80, No. SUPPL., 17.06.2005, p. 374-377.

Research output: Contribution to journalArticle

Hiraiwa, A. ; Ishikawa, D. / Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides. In: Microelectronic Engineering. 2005 ; Vol. 80, No. SUPPL. pp. 374-377.
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