Abstract
The threading dislocation reduction behavior upon insertion of a single thick InGaAs intermediate layer into the GaAs heteroepitaxial layers on Si has been investigated. In the X-ray diffraction, with increasing InGaAs thickness below 0.5 μm, the full width at half-maximum (FWHM) of the GaAs overlayer decreases even if the InGaAs thickness is beyond the critical layer thickness. In the cross-sectional transmission electron microscopy (TEM) observations, it has been found that sufficient misfit dislocations are introduced and that the threading dislocation density decreases at the GaAs/InGaAs interfaces in samples with InGaAs thicker than 0.1 μm. The analysis based on the mechanical equilibrium theory shows that misfit dislocation formation at the interfaces plays an important role in reducing the threading dislocation density. The InGaAs intermediate layer is required to be thick enough to form misfit dislocations at the interfaces with relaxation of strain in the intermediate layer.
| Original language | English |
|---|---|
| Title of host publication | Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers |
| Publisher | JJAP |
| Pages | 1466-1471 |
| Number of pages | 6 |
| Volume | 34 |
| Edition | 3 |
| Publication status | Published - 1995 Mar |
| Externally published | Yes |
Fingerprint
ASJC Scopus subject areas
- Engineering(all)
Cite this
Threading dislocation reduction in GaAs on Si with a single InGaAs intermediate layer. / Shiba, Yasunari; Asai, Koyu; Kamei, Kazuhito; Katahama, Hisashi.
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers. Vol. 34 3. ed. JJAP, 1995. p. 1466-1471.Research output: Chapter in Book/Report/Conference proceeding › Chapter
}
TY - CHAP
T1 - Threading dislocation reduction in GaAs on Si with a single InGaAs intermediate layer
AU - Shiba, Yasunari
AU - Asai, Koyu
AU - Kamei, Kazuhito
AU - Katahama, Hisashi
PY - 1995/3
Y1 - 1995/3
N2 - The threading dislocation reduction behavior upon insertion of a single thick InGaAs intermediate layer into the GaAs heteroepitaxial layers on Si has been investigated. In the X-ray diffraction, with increasing InGaAs thickness below 0.5 μm, the full width at half-maximum (FWHM) of the GaAs overlayer decreases even if the InGaAs thickness is beyond the critical layer thickness. In the cross-sectional transmission electron microscopy (TEM) observations, it has been found that sufficient misfit dislocations are introduced and that the threading dislocation density decreases at the GaAs/InGaAs interfaces in samples with InGaAs thicker than 0.1 μm. The analysis based on the mechanical equilibrium theory shows that misfit dislocation formation at the interfaces plays an important role in reducing the threading dislocation density. The InGaAs intermediate layer is required to be thick enough to form misfit dislocations at the interfaces with relaxation of strain in the intermediate layer.
AB - The threading dislocation reduction behavior upon insertion of a single thick InGaAs intermediate layer into the GaAs heteroepitaxial layers on Si has been investigated. In the X-ray diffraction, with increasing InGaAs thickness below 0.5 μm, the full width at half-maximum (FWHM) of the GaAs overlayer decreases even if the InGaAs thickness is beyond the critical layer thickness. In the cross-sectional transmission electron microscopy (TEM) observations, it has been found that sufficient misfit dislocations are introduced and that the threading dislocation density decreases at the GaAs/InGaAs interfaces in samples with InGaAs thicker than 0.1 μm. The analysis based on the mechanical equilibrium theory shows that misfit dislocation formation at the interfaces plays an important role in reducing the threading dislocation density. The InGaAs intermediate layer is required to be thick enough to form misfit dislocations at the interfaces with relaxation of strain in the intermediate layer.
UR - http://www.scopus.com/inward/record.url?scp=0029276814&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029276814&partnerID=8YFLogxK
M3 - Chapter
AN - SCOPUS:0029276814
VL - 34
SP - 1466
EP - 1471
BT - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers
PB - JJAP
ER -