Threading dislocation reduction in InP on GaAs by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on GaAs

Yae Okuno, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

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7 Citations (Scopus)

Abstract

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long-wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.

Original languageEnglish
Pages (from-to)614-617
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume32
Issue number1 B
Publication statusPublished - 1993 Jan
Externally publishedYes

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interlayers
Fabrication
Wavelength
fabrication
Lasers
Substrates
wavelengths
lasers
Electron microscopes
threshold currents
insertion
electron microscopes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long-wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70{\%} on average and is also distributed more uniformly.",
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T1 - Threading dislocation reduction in InP on GaAs by thin strained interlayer and its application to the fabrication of 1.3-μm-wavelength laser on GaAs

AU - Okuno, Yae

AU - Kawano, Toshihiro

AU - Tsuchiya, Tomonobu

AU - Taniwatari, Tsuyoshi

PY - 1993/1

Y1 - 1993/1

N2 - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long-wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.

AB - This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and a long-wavelength laser fabricated on a GaAs substrate with SILs. A cross-sectional transmission electron microscope is used to observe the dislocation blocking ability of an SIL made of InGaP, which is inserted in an InP layer grown on a GaAs substrate. The characteristics of the BH laser emitting at 1.3 μm on GaAs are investigated. Most of them are improved by SIL insertion. In particular, threshold current is reduced to 70% on average and is also distributed more uniformly.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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