Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

Original languageEnglish
Pages610-612
Number of pages3
Publication statusPublished - 1992 Dec 1
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • Engineering(all)

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    Okuno, Y., Kawano, T., Tsuchiya, T., & Taniwatari, T. (1992). Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. 610-612. Paper presented at Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, .