Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs

Yae Okuno, Toshihiro Kawano, Tomonobu Tsuchiya, Tsuyoshi Taniwatari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

This paper examines the reduction of threading dislocation by a thin strained interlayer (SIL), and long-wavelength lasers fabricated on a GaAs substrate with SILs. Cross-sectional transmission electron microscope (TEM) is used to observe the dislocation blocking ability of a InGaP SIL inserted in an InP layer grown on a GaAs substrate. The characteristics of the lasers are improved due to dislocation reduction. Their threshold current is reduced to 70% on average and is also distributed more uniformly.

Original languageEnglish
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages610-612
Number of pages3
Publication statusPublished - 1992
Externally publishedYes
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: 1992 Aug 261992 Aug 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

Fingerprint

Fabrication
Wavelength
Lasers
Substrates
Electron microscopes

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Okuno, Y., Kawano, T., Tsuchiya, T., & Taniwatari, T. (1992). Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. In Conference on Solid State Devices and Materials (pp. 610-612). Publ by Business Cent for Acad Soc Japan.

Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. / Okuno, Yae; Kawano, Toshihiro; Tsuchiya, Tomonobu; Taniwatari, Tsuyoshi.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. p. 610-612.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Okuno, Y, Kawano, T, Tsuchiya, T & Taniwatari, T 1992, Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 610-612, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 92/8/26.
Okuno Y, Kawano T, Tsuchiya T, Taniwatari T. Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1992. p. 610-612
Okuno, Yae ; Kawano, Toshihiro ; Tsuchiya, Tomonobu ; Taniwatari, Tsuyoshi. / Threading dislocation reduction in InP/GaAs by thin strained interlayer and its application to the fabrication of 1.3 μm wavelength laser on GaAs. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. pp. 610-612
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