Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

73 Citations (Scopus)

Abstract

To clarify the mechanisms governing the formation and reduction of threading dislocations (TDs) in aluminum nitride (AlN) layers grown on SiC (0 0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), we characterized the mosaicity and the growth mode. High-density (∼1011 cm-2) three-dimensional (3D) AlN islands nucleate on the substrate. Because the islands are slightly misoriented with respect to each other, dislocations are generated with a high density of 1010-1011 cm-2 as the islands coalesce. However, most of the dislocations are annihilated because their propagation direction changes horizontally during the island growth. Thus, at the initial growth stage, the dislocation density is drastically decreased to 108-109 cm-2. Consequently, as the layer thickness increases, the defect-free region becomes larger and the misorientation becomes smaller. On the other hand, we found that the TDs induce a large tensile strain and that the residual strain decreases with decreasing dislocation density. From the relationship between a- and c-lattice strains, the Poisson ratio of AlN was determined to be 0.19.

Original languageEnglish
Pages (from-to)310-315
Number of pages6
JournalJournal of Crystal Growth
Volume298
Issue numberSPEC. ISS
DOIs
Publication statusPublished - 2007 Jan
Externally publishedYes

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Metallorganic vapor phase epitaxy
Aluminum nitride
aluminum nitrides
vapor phase epitaxy
Substrates
Tensile strain
Poisson ratio
Defects
misalignment
aluminum nitride
propagation
defects

Keywords

  • A1. X-ray diffraction
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate. / Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki.

In: Journal of Crystal Growth, Vol. 298, No. SPEC. ISS, 01.2007, p. 310-315.

Research output: Contribution to journalArticle

@article{7b1acfc2390f4c18bcf1c71e5fa3662b,
title = "Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate",
abstract = "To clarify the mechanisms governing the formation and reduction of threading dislocations (TDs) in aluminum nitride (AlN) layers grown on SiC (0 0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), we characterized the mosaicity and the growth mode. High-density (∼1011 cm-2) three-dimensional (3D) AlN islands nucleate on the substrate. Because the islands are slightly misoriented with respect to each other, dislocations are generated with a high density of 1010-1011 cm-2 as the islands coalesce. However, most of the dislocations are annihilated because their propagation direction changes horizontally during the island growth. Thus, at the initial growth stage, the dislocation density is drastically decreased to 108-109 cm-2. Consequently, as the layer thickness increases, the defect-free region becomes larger and the misorientation becomes smaller. On the other hand, we found that the TDs induce a large tensile strain and that the residual strain decreases with decreasing dislocation density. From the relationship between a- and c-lattice strains, the Poisson ratio of AlN was determined to be 0.19.",
keywords = "A1. X-ray diffraction, A3. Metalorganic vapor phase epitaxy, B1. Nitrides",
author = "Yoshitaka Taniyasu and Makoto Kasu and Toshiki Makimoto",
year = "2007",
month = "1",
doi = "10.1016/j.jcrysgro.2006.10.032",
language = "English",
volume = "298",
pages = "310--315",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "SPEC. ISS",

}

TY - JOUR

T1 - Threading dislocations in heteroepitaxial AlN layer grown by MOVPE on SiC (0 0 0 1) substrate

AU - Taniyasu, Yoshitaka

AU - Kasu, Makoto

AU - Makimoto, Toshiki

PY - 2007/1

Y1 - 2007/1

N2 - To clarify the mechanisms governing the formation and reduction of threading dislocations (TDs) in aluminum nitride (AlN) layers grown on SiC (0 0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), we characterized the mosaicity and the growth mode. High-density (∼1011 cm-2) three-dimensional (3D) AlN islands nucleate on the substrate. Because the islands are slightly misoriented with respect to each other, dislocations are generated with a high density of 1010-1011 cm-2 as the islands coalesce. However, most of the dislocations are annihilated because their propagation direction changes horizontally during the island growth. Thus, at the initial growth stage, the dislocation density is drastically decreased to 108-109 cm-2. Consequently, as the layer thickness increases, the defect-free region becomes larger and the misorientation becomes smaller. On the other hand, we found that the TDs induce a large tensile strain and that the residual strain decreases with decreasing dislocation density. From the relationship between a- and c-lattice strains, the Poisson ratio of AlN was determined to be 0.19.

AB - To clarify the mechanisms governing the formation and reduction of threading dislocations (TDs) in aluminum nitride (AlN) layers grown on SiC (0 0 0 1) substrates by metalorganic vapor phase epitaxy (MOVPE), we characterized the mosaicity and the growth mode. High-density (∼1011 cm-2) three-dimensional (3D) AlN islands nucleate on the substrate. Because the islands are slightly misoriented with respect to each other, dislocations are generated with a high density of 1010-1011 cm-2 as the islands coalesce. However, most of the dislocations are annihilated because their propagation direction changes horizontally during the island growth. Thus, at the initial growth stage, the dislocation density is drastically decreased to 108-109 cm-2. Consequently, as the layer thickness increases, the defect-free region becomes larger and the misorientation becomes smaller. On the other hand, we found that the TDs induce a large tensile strain and that the residual strain decreases with decreasing dislocation density. From the relationship between a- and c-lattice strains, the Poisson ratio of AlN was determined to be 0.19.

KW - A1. X-ray diffraction

KW - A3. Metalorganic vapor phase epitaxy

KW - B1. Nitrides

UR - http://www.scopus.com/inward/record.url?scp=33846442038&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846442038&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2006.10.032

DO - 10.1016/j.jcrysgro.2006.10.032

M3 - Article

AN - SCOPUS:33846442038

VL - 298

SP - 310

EP - 315

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - SPEC. ISS

ER -