Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition

Satoshi Amagi, Daisuke Takahashi, Toyonobu Yoshida

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The nucleation and growth conditions of c-BN films were studied in low-pressure inductively coupled plasma enhanced chemical-vapor deposition. The threshold sheath potentials needed for the nucleation and the growth of c-BN were sustained by two step Vsheath deposition. The threshold sheath potential for the growth Vsheath g was found to be significantly lower than the threshold value required for nucleation Vsheath n. Under our experimental condition, the values of Vsheath g and Vsheath n were found to be 45 and 65 V.

Original languageEnglish
Pages (from-to)946-948
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number8
Publication statusPublished - 1997 Feb 24
Externally publishedYes

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boron nitrides
sheaths
vapor deposition
nucleation
thresholds
low pressure

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Threshold sheath potential for the nucleation and growth of cubic boron nitride by inductively coupled plasma enhanced chemical-vapor deposition. / Amagi, Satoshi; Takahashi, Daisuke; Yoshida, Toyonobu.

In: Applied Physics Letters, Vol. 70, No. 8, 24.02.1997, p. 946-948.

Research output: Contribution to journalArticle

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