Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

Original languageEnglish
Article number013505
JournalApplied Physics Letters
Volume111
Issue number1
DOIs
Publication statusPublished - 2017 Jul 3

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation'. Together they form a unique fingerprint.

  • Cite this

    Naramura, T., Inaba, M., Mizuno, S., Igarashi, K., Kida, E., Mohd Sukri, S. F., Shintani, Y., & Kawarada, H. (2017). Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation. Applied Physics Letters, 111(1), [013505]. https://doi.org/10.1063/1.4991364