Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation

Takuro Naramura, Masafumi Inaba, Sho Mizuno, Keisuke Igarashi, Eriko Kida, Shaili Falina Mohd Sukri, Yukihiro Shintani, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    3 Citations (Scopus)

    Abstract

    Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.

    Original languageEnglish
    Article number013505
    JournalApplied Physics Letters
    Volume111
    Issue number1
    DOIs
    Publication statusPublished - 2017 Jul 3

    Fingerprint

    electrochemical oxidation
    threshold voltage
    field effect transistors
    diamonds
    electrolytes
    oxidation
    hole mobility
    degradation
    sensors
    electric potential
    hydrogen
    ions

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation. / Naramura, Takuro; Inaba, Masafumi; Mizuno, Sho; Igarashi, Keisuke; Kida, Eriko; Mohd Sukri, Shaili Falina; Shintani, Yukihiro; Kawarada, Hiroshi.

    In: Applied Physics Letters, Vol. 111, No. 1, 013505, 03.07.2017.

    Research output: Contribution to journalArticle

    Naramura, T, Inaba, M, Mizuno, S, Igarashi, K, Kida, E, Mohd Sukri, SF, Shintani, Y & Kawarada, H 2017, 'Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation', Applied Physics Letters, vol. 111, no. 1, 013505. https://doi.org/10.1063/1.4991364
    Naramura, Takuro ; Inaba, Masafumi ; Mizuno, Sho ; Igarashi, Keisuke ; Kida, Eriko ; Mohd Sukri, Shaili Falina ; Shintani, Yukihiro ; Kawarada, Hiroshi. / Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation. In: Applied Physics Letters. 2017 ; Vol. 111, No. 1.
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    AU - Kida, Eriko

    AU - Mohd Sukri, Shaili Falina

    AU - Shintani, Yukihiro

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