Time-resolved electroluminescence study of green light-emitting diode

T. Kuroda, N. Horio, K. Taniguchi, H. Sato, C. Funaoka, A. Tackeuchi

Research output: Contribution to journalConference article

Abstract

We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.

Original languageEnglish
Pages (from-to)25-28
Number of pages4
JournalPhysica Status Solidi C: Conferences
Issue number1
DOIs
Publication statusPublished - 2002 Dec 1
Event2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
Duration: 2002 Jul 222002 Jul 25

ASJC Scopus subject areas

  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Time-resolved electroluminescence study of green light-emitting diode'. Together they form a unique fingerprint.

  • Cite this