Time-resolved photoluminescence study of hydrogenated amorphous silicon nitride

Kwang Soo Seol, Takashi Watanabe, Makoto Fujimaki, Hiromitsu Kato, Yoshimichi Ohki

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24 Citations (Scopus)

Abstract

Time-resolved measurements of photoluminescence were carried out on a hydrogenated amorphous silicon nitride film prepared by low-pressure chemical vapor deposition. When excited with 5.0-eV photons, photoluminescence occurs over a broad spectrum ranging from 1.8 to 3.6 eV. The peak energy of this photoluminescence varies with time from several nanoseconds to nearly 1 ms. These results are explained by a combination of an excitonlike recombination process and a radiative tunneling recombination process of photogenerated carriers within the band-tail states, which are affected by the contributions of thermalization, the Coulombic interaction, and the extent of localization.

Original languageEnglish
Pages (from-to)1532-1535
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number3
DOIs
Publication statusPublished - 2000 Jan 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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