Time-resolved photoluminescence study of InGaN MQW with a p-contact layer

T. Kuroda*, R. Sasou, A. Tackeuchi, H. Sato, N. Horio, C. Funaoka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


To clarify the influence of diffused Mg impurities on the carrier recombination in InGaN multiple quantum wells (MQWs), we have performed a systematic study using time-resolved photoluminescence (PL) measurements. It was found that the MQWs with a p-contact layer and the MQWs with a nondoped GaN layer had almost the same carrier lifetime and PL intensity below 200 K. However, the MQWs with the p-contact layer had shorter carrier lifetime and lower PL intensity than the MQWs with the nondoped GaN layer above 200 K. This degradation of the PL for the MQWs with the p-contact layer can be attributed to nonradiative recombination caused by the diffusion of Mg impurities from the p-contact layer into MQWs.

Original languageEnglish
Pages (from-to)125-128
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Issue number1
Publication statusPublished - 2001 Nov 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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