Time-resolved photoluminescence study of InGaN MQW with a p-contact layer

T. Kuroda, R. Sasou, Atsushi Tackeuchi, H. Sato, N. Horio, C. Funaoka

    Research output: Contribution to journalArticle

    Abstract

    To clarify the influence of diffused Mg impurities on the carrier recombination in InGaN multiple quantum wells (MQWs), we have performed a systematic study using time-resolved photoluminescence (PL) measurements. It was found that the MQWs with a p-contact layer and the MQWs with a nondoped GaN layer had almost the same carrier lifetime and PL intensity below 200 K. However, the MQWs with the p-contact layer had shorter carrier lifetime and lower PL intensity than the MQWs with the nondoped GaN layer above 200 K. This degradation of the PL for the MQWs with the p-contact layer can be attributed to nonradiative recombination caused by the diffusion of Mg impurities from the p-contact layer into MQWs.

    Original languageEnglish
    Pages (from-to)125-128
    Number of pages4
    JournalPhysica Status Solidi (B) Basic Research
    Volume228
    Issue number1
    DOIs
    Publication statusPublished - 2001 Nov

    Fingerprint

    Semiconductor quantum wells
    Photoluminescence
    quantum wells
    photoluminescence
    Carrier lifetime
    carrier lifetime
    Impurities
    impurities
    Time and motion study
    degradation
    Degradation

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Cite this

    Time-resolved photoluminescence study of InGaN MQW with a p-contact layer. / Kuroda, T.; Sasou, R.; Tackeuchi, Atsushi; Sato, H.; Horio, N.; Funaoka, C.

    In: Physica Status Solidi (B) Basic Research, Vol. 228, No. 1, 11.2001, p. 125-128.

    Research output: Contribution to journalArticle

    Kuroda, T. ; Sasou, R. ; Tackeuchi, Atsushi ; Sato, H. ; Horio, N. ; Funaoka, C. / Time-resolved photoluminescence study of InGaN MQW with a p-contact layer. In: Physica Status Solidi (B) Basic Research. 2001 ; Vol. 228, No. 1. pp. 125-128.
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    AU - Sato, H.

    AU - Horio, N.

    AU - Funaoka, C.

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