Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer

Qing Yang, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang

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    Abstract

    The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D 0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.

    Original languageEnglish
    Article number4864750
    JournalAIP Advances
    Volume4
    Issue number2
    DOIs
    Publication statusPublished - 2014 Feb

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    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Yang, Q., Zhou, X., Nukui, T., Saeki, Y., Izumi, S., Tackeuchi, A., Tatsuoka, H., & Liang, S. (2014). Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O 4 composite layer. AIP Advances, 4(2), [4864750]. https://doi.org/10.1063/1.4864750