TOC removal of raw industrial wastewater from LSI photo-resist processing with H2O2/UV in a batch reactor

W. J. Hou, Satoshi Tsuneda, A. Hirata

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    Abstract

    The raw industrial wastewater from LSI photo-resist processing which contains 1,2-naphthoquinone-2-diazido-5-sulfonic acid sodium salt as a main component with high NaCl concentration (>20 kg/m3), is very difficult to treat. The establishment of an appropriate treatment, which is friendly to the earth's environment for raw industrial wastewater is an urgent matter to be solved. Total organic carbon (TOC) removal of the raw industrial wastewater, which contains TOC at 8000 g-TOC/m3, by using hydrogen peroxide and ultraviolet irradiation (H2O2/UV), has been carried out. Experiments were carried out in a batch reactor with a low pressure UV lamp (500 W) irradiating ultraviolet at 254 nm and at 185 nm (5%). The chemical compounds included in the raw industrial wastewater have been removed completely in the presence of initial concentration of hydrogen peroxide of two times the stoichiometric ratio.

    Original languageEnglish
    Pages (from-to)444-447
    Number of pages4
    JournalJournal of Chemical Engineering of Japan
    Volume34
    Issue number3
    DOIs
    Publication statusPublished - 2001 Mar

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    Keywords

    • Hydrogen peroxide
    • LSI photo-resist
    • Raw industrial wastewater
    • TOC removal
    • UV

    ASJC Scopus subject areas

    • Chemical Engineering(all)

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