Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents

K. Kusunoki, K. Kamei, N. Okada, K. Moriguchi, H. Kaido, H. Daikoku, M. Kado, K. Danno, H. Sakamoto, T. Bessho, T. Ujihara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We performed top-seeded solution growth of 4H-SiC for obtaining longer length crystal. Si-Cr and Si-Ti melts were used as solvents. Meniscus formation technique was applied to the present study. Special attention was paid to improve the process stability during long-term growth. One of major technological problems in the solution growth is that the precipitation of polycrystalline SiC which hiders the stable single crystal growth. Another problem is the fluctuation of supersaturation at the growth interface during the growth. Through the optimization of growth process conditions, we have successfully grown 4H-SiC single crystals up to 14 mm long with three-inch-diameter, and evaluated their crystalline quality.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publications Ltd
Pages79-82
Number of pages4
Volume778-780
ISBN (Print)9783038350101
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 - Miyazaki, Japan
Duration: 2013 Sep 292013 Oct 4

Publication series

NameMaterials Science Forum
Volume778-780
ISSN (Print)02555476

Other

Other15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013
CountryJapan
CityMiyazaki
Period13/9/2913/10/4

Keywords

  • 3-inch diameter
  • 4H-SiC
  • Meniscus formation technique
  • Metal solvent
  • Top-seeded solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

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  • Cite this

    Kusunoki, K., Kamei, K., Okada, N., Moriguchi, K., Kaido, H., Daikoku, H., Kado, M., Danno, K., Sakamoto, H., Bessho, T., & Ujihara, T. (2014). Top-seeded solution growth of 3 inch diameter 4H-SiC bulk crystal using metal solvents. In Materials Science Forum (Vol. 778-780, pp. 79-82). (Materials Science Forum; Vol. 778-780). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.778-780.79