Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt

H. Daikoku, M. Kado, H. Sakamoto, H. Suzuki, T. Bessho, K. Kusunoki, N. Yashiro, N. Okada, K. Moriguchi, K. Kamei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

30 Citations (Scopus)

Abstract

We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

Original languageEnglish
Title of host publicationMaterials Science Forum
Pages61-64
Number of pages4
Volume717-720
DOIs
Publication statusPublished - 2012
Externally publishedYes
Event14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011 - Cleveland, OH, United States
Duration: 2011 Sep 112011 Sep 16

Publication series

NameMaterials Science Forum
Volume717-720
ISSN (Print)02555476

Other

Other14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011
CountryUnited States
CityCleveland, OH
Period11/9/1111/9/16

Fingerprint

Crystals
crystals
menisci
seeds
Polycrystals
polycrystals
Full width at half maximum
Optical microscopy
voids
adjusting
inclusions
microscopy

Keywords

  • 4H SiC
  • Meniscus
  • Solution growth

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

Daikoku, H., Kado, M., Sakamoto, H., Suzuki, H., Bessho, T., Kusunoki, K., ... Kamei, K. (2012). Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt. In Materials Science Forum (Vol. 717-720, pp. 61-64). (Materials Science Forum; Vol. 717-720). https://doi.org/10.4028/www.scientific.net/MSF.717-720.61

Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt. / Daikoku, H.; Kado, M.; Sakamoto, H.; Suzuki, H.; Bessho, T.; Kusunoki, K.; Yashiro, N.; Okada, N.; Moriguchi, K.; Kamei, K.

Materials Science Forum. Vol. 717-720 2012. p. 61-64 (Materials Science Forum; Vol. 717-720).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Daikoku, H, Kado, M, Sakamoto, H, Suzuki, H, Bessho, T, Kusunoki, K, Yashiro, N, Okada, N, Moriguchi, K & Kamei, K 2012, Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt. in Materials Science Forum. vol. 717-720, Materials Science Forum, vol. 717-720, pp. 61-64, 14th International Conference on Silicon Carbide and Related Materials 2011, ICSCRM 2011, Cleveland, OH, United States, 11/9/11. https://doi.org/10.4028/www.scientific.net/MSF.717-720.61
Daikoku H, Kado M, Sakamoto H, Suzuki H, Bessho T, Kusunoki K et al. Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt. In Materials Science Forum. Vol. 717-720. 2012. p. 61-64. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.717-720.61
Daikoku, H. ; Kado, M. ; Sakamoto, H. ; Suzuki, H. ; Bessho, T. ; Kusunoki, K. ; Yashiro, N. ; Okada, N. ; Moriguchi, K. ; Kamei, K. / Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt. Materials Science Forum. Vol. 717-720 2012. pp. 61-64 (Materials Science Forum).
@inproceedings{ad6d3bbd7e464106aea1374b8c513dfe,
title = "Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt",
abstract = "We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.",
keywords = "4H SiC, Meniscus, Solution growth",
author = "H. Daikoku and M. Kado and H. Sakamoto and H. Suzuki and T. Bessho and K. Kusunoki and N. Yashiro and N. Okada and K. Moriguchi and K. Kamei",
year = "2012",
doi = "10.4028/www.scientific.net/MSF.717-720.61",
language = "English",
isbn = "9783037854198",
volume = "717-720",
series = "Materials Science Forum",
pages = "61--64",
booktitle = "Materials Science Forum",

}

TY - GEN

T1 - Top-seeded solution growth of 4H-SiC bulk crystal using Si-Cr based melt

AU - Daikoku, H.

AU - Kado, M.

AU - Sakamoto, H.

AU - Suzuki, H.

AU - Bessho, T.

AU - Kusunoki, K.

AU - Yashiro, N.

AU - Okada, N.

AU - Moriguchi, K.

AU - Kamei, K.

PY - 2012

Y1 - 2012

N2 - We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

AB - We have grown high-quality long cylindrical (12 mm thick) 4H-SiC bulk crystals by the meniscus formation technique, which was first applied for the solution growth of bulk SiC. It enabled long-term growth by suppressing parasitic reactions such as polycrystal precipitation around the seed crystal. In addition, we could control the growth angle from -22° to 61° by adjusting the meniscus height. The thickness of the grown cylindrical crystals was 12 mm, which is the largest reported until now, and corresponded to a growth rate of 0.6 mm/h. Smooth morphology growth was maintained on the (000-1) C-face. In cross-sectional transmission optical microscopy images, few solvent inclusions and voids were observed. XRD measurements revealed that the FWHM values of the grown crystals were almost the same as those of the seed crystal.

KW - 4H SiC

KW - Meniscus

KW - Solution growth

UR - http://www.scopus.com/inward/record.url?scp=84861386831&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84861386831&partnerID=8YFLogxK

U2 - 10.4028/www.scientific.net/MSF.717-720.61

DO - 10.4028/www.scientific.net/MSF.717-720.61

M3 - Conference contribution

SN - 9783037854198

VL - 717-720

T3 - Materials Science Forum

SP - 61

EP - 64

BT - Materials Science Forum

ER -