Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique

T. Matsukawa, A. Kishida, Takashi Tanii, M. Koh, K. Horita, K. Hara, B. Shigeta, M. Goto, S. Matsuda, S. Kuboyama, I. Ohdomari

    Research output: Contribution to journalArticle

    24 Citations (Scopus)

    Abstract

    Total dose effect on the soft-error susceptibility of 64 kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p-MOSFETs have become more susceptible at higher dose while that of the n-MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

    Original languageEnglish
    Pages (from-to)2071-2076
    Number of pages6
    JournalIEEE Transactions on Nuclear Science
    Volume41
    Issue number6 p 1
    Publication statusPublished - 1994 Dec

    Fingerprint

    Static random access storage
    hardness
    Hardness
    dosage
    Ions
    ions
    field effect transistors
    magnetic permeability
    Ion bombardment
    ion irradiation
    Threshold voltage
    threshold voltage
    CMOS
    damage
    Data storage equipment
    Oxides
    oxides
    sensitivity
    shift
    cells

    ASJC Scopus subject areas

    • Nuclear Energy and Engineering
    • Electrical and Electronic Engineering

    Cite this

    Matsukawa, T., Kishida, A., Tanii, T., Koh, M., Horita, K., Hara, K., ... Ohdomari, I. (1994). Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. IEEE Transactions on Nuclear Science, 41(6 p 1), 2071-2076.

    Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. / Matsukawa, T.; Kishida, A.; Tanii, Takashi; Koh, M.; Horita, K.; Hara, K.; Shigeta, B.; Goto, M.; Matsuda, S.; Kuboyama, S.; Ohdomari, I.

    In: IEEE Transactions on Nuclear Science, Vol. 41, No. 6 p 1, 12.1994, p. 2071-2076.

    Research output: Contribution to journalArticle

    Matsukawa, T, Kishida, A, Tanii, T, Koh, M, Horita, K, Hara, K, Shigeta, B, Goto, M, Matsuda, S, Kuboyama, S & Ohdomari, I 1994, 'Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique', IEEE Transactions on Nuclear Science, vol. 41, no. 6 p 1, pp. 2071-2076.
    Matsukawa, T. ; Kishida, A. ; Tanii, Takashi ; Koh, M. ; Horita, K. ; Hara, K. ; Shigeta, B. ; Goto, M. ; Matsuda, S. ; Kuboyama, S. ; Ohdomari, I. / Total dose dependence of soft-error hardness in 64 kbit SRAMs evaluated by single-ion microprobe technique. In: IEEE Transactions on Nuclear Science. 1994 ; Vol. 41, No. 6 p 1. pp. 2071-2076.
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    AU - Hara, K.

    AU - Shigeta, B.

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