Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique

T. Matsukawa; A. Kishida; T. Tanii; M. Koh; K. Horita; K. Hara; B. Shigeta; M. Goto; I. Ohdomari; S. Matsuda; S. Kuboyama

doi:10.1109/23.340544

Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique

T. Matsukawa, A. Kishida, T. Tanii, M. Koh, K. Horita, K. Hara, B. Shigeta, M. Goto, I. Ohdomari, S. Matsuda, S. Kuboyama

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

Original language	English
Pages (from-to)	2071-2076
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/23.340544
Publication status	Published - 1994 Dec

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/23.340544

Fingerprint Dive into the research topics of 'Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique'. Together they form a unique fingerprint.

Cite this

Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique. / Matsukawa, T.; Kishida, A.; Tanii, T.; Koh, M.; Horita, K.; Hara, K.; Shigeta, B.; Goto, M.; Ohdomari, I.; Matsuda, S.; Kuboyama, S.

In: IEEE Transactions on Nuclear Science, Vol. 41, No. 6, 12.1994, p. 2071-2076.

Research output: Contribution to journal › Article › peer-review

@article{d4d289fa53dd462faa9b52a24e57be4e,

title = "Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique",

abstract = "Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.",

author = "T. Matsukawa and A. Kishida and T. Tanii and M. Koh and K. Horita and K. Hara and B. Shigeta and M. Goto and I. Ohdomari and S. Matsuda and S. Kuboyama",

year = "1994",

month = dec,

doi = "10.1109/23.340544",

language = "English",

volume = "41",

pages = "2071--2076",

journal = "IEEE Transactions on Nuclear Science",

issn = "0018-9499",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique

AU - Matsukawa, T.

AU - Kishida, A.

AU - Tanii, T.

AU - Koh, M.

AU - Horita, K.

AU - Hara, K.

AU - Shigeta, B.

AU - Goto, M.

AU - Ohdomari, I.

AU - Matsuda, S.

AU - Kuboyama, S.

PY - 1994/12

Y1 - 1994/12

N2 - Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

AB - Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.

UR - http://www.scopus.com/inward/record.url?scp=0028712008&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028712008&partnerID=8YFLogxK

U2 - 10.1109/23.340544

DO - 10.1109/23.340544

M3 - Article

AN - SCOPUS:0028712008

VL - 41

SP - 2071

EP - 2076

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 6

ER -