@article{d4d289fa53dd462faa9b52a24e57be4e,
title = "Total Dose Dependence of Soft-Error Hardness in 64kbit SRAMs Evaluated by Single-Ion Microprobe Technique",
abstract = "Total dose effect on the soft-error susceptibility of 64kbit CMOS SRAM has been investigated by using the single ion microprobe technique which enables us to get a map of soft-error sensitivity in a memory cell by hitting a micron-size area with single ions. The effects of the ion dose on the susceptibility of each error-sensitive site have been evaluated. The errors due to the upset of p MOSFETs have become more susceptible at higher dose while that of the N MOSFETs less susceptible. One of the origins of the errors are the negative threshold voltage(Vth) shifts of the MOSFETs which are caused by oxide trapped charges. Displacement damage induced by ion irradiation also affects the susceptibility to the soft-error.",
author = "T. Matsukawa and A. Kishida and T. Tanii and M. Koh and K. Horita and K. Hara and B. Shigeta and M. Goto and I. Ohdomari and S. Matsuda and S. Kuboyama",
note = "Funding Information: The total dose effect on soft-error sensitivity in static random access memories (SRAMs) was investigated previously by several groups[l,2,3]. For example, by Stassinopoulos et a1[3] the total dose effect is reported to be the decrease in threshold linear energy transfer(LET) and the increase in the soft-error cross section. The results so far based on the threshold LET and the cross sections obtained from whole-chip irradiation testl41, however, give rather only indirect and insufficient information on radiation hardness. Therefore, it is necessary to identify directly the sites susceptible to soft-errors and to optimize device structures from the result of site identification. The trial to map the soft-error susceptible sites This work has been supported in part by a Grant-in-Aid for Specially Promoted Research, the Ministry of Education, Science and Culture in Japan, and also by a JSPS Fellowships for Japanese Junior Scientists. Copyright: Copyright 2015 Elsevier B.V., All rights reserved.",
year = "1994",
month = dec,
doi = "10.1109/23.340544",
language = "English",
volume = "41",
pages = "2071--2076",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}