Transconductance enhancement of Si nanowire transistors by oxide-induced strain

A. Seike; T. Tange; I. Sano; Y. Sugiura; I. Tsuchida; H. Ohta; T. Watanabe; D. Kosemura; A. Ogura; I. Ohdomari

doi:10.1109/ICICDT.2008.4567280

Transconductance enhancement of Si nanowire transistors by oxide-induced strain

A. Seike^*, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Transconductance (g_m) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of g_m are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that g_m enhancement is due to tensile stress introduced by the PADOX approach.

Original language	English
Title of host publication	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages	207-210
Number of pages	4
DOIs	https://doi.org/10.1109/ICICDT.2008.4567280
Publication status	Published - 2008
Event	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France Duration: 2008 Jun 2 → 2008 Jun 4

Publication series

Name	Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

Conference	IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
Country/Territory	France
City	Minatec Grenoble
Period	08/6/2 → 08/6/4

Keywords

CMOS
Nanowire
PADOX
Strain
Transconductance enhancement
Transistors

ASJC Scopus subject areas

Human-Computer Interaction
Electrical and Electronic Engineering

Access to Document

10.1109/ICICDT.2008.4567280

Cite this

Seike, A., Tange, T., Sano, I., Sugiura, Y., Tsuchida, I., Ohta, H., Watanabe, T., Kosemura, D., Ogura, A., & Ohdomari, I. (2008). Transconductance enhancement of Si nanowire transistors by oxide-induced strain. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 207-210). [4567280] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567280

Transconductance enhancement of Si nanowire transistors by oxide-induced strain. / Seike, A.; Tange, T.; Sano, I. et al.

Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 207-210 4567280 (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Seike, A, Tange, T, Sano, I, Sugiura, Y, Tsuchida, I, Ohta, H, Watanabe, T, Kosemura, D, Ogura, A & Ohdomari, I 2008, Transconductance enhancement of Si nanowire transistors by oxide-induced strain. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567280, Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT, pp. 207-210, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, France, 08/6/2. https://doi.org/10.1109/ICICDT.2008.4567280

Seike A, Tange T, Sano I, Sugiura Y, Tsuchida I, Ohta H et al. Transconductance enhancement of Si nanowire transistors by oxide-induced strain. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 207-210. 4567280. (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). doi: 10.1109/ICICDT.2008.4567280

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title = "Transconductance enhancement of Si nanowire transistors by oxide-induced strain",

abstract = "Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.",

keywords = "CMOS, Nanowire, PADOX, Strain, Transconductance enhancement, Transistors",

author = "A. Seike and T. Tange and I. Sano and Y. Sugiura and I. Tsuchida and H. Ohta and T. Watanabe and D. Kosemura and A. Ogura and I. Ohdomari",

year = "2008",

doi = "10.1109/ICICDT.2008.4567280",

language = "English",

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series = "Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT",

pages = "207--210",

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note = "IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 ; Conference date: 02-06-2008 Through 04-06-2008",

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T1 - Transconductance enhancement of Si nanowire transistors by oxide-induced strain

AU - Seike, A.

AU - Tange, T.

AU - Sano, I.

AU - Sugiura, Y.

AU - Tsuchida, I.

AU - Ohta, H.

AU - Watanabe, T.

AU - Kosemura, D.

AU - Ogura, A.

AU - Ohdomari, I.

PY - 2008

Y1 - 2008

N2 - Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

AB - Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

KW - CMOS

KW - Nanowire

KW - PADOX

KW - Strain

KW - Transconductance enhancement

KW - Transistors

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BT - Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

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Y2 - 2 June 2008 through 4 June 2008

ER -

Transconductance enhancement of Si nanowire transistors by oxide-induced strain

Abstract

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Keywords

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