Transconductance enhancement of Si nanowire transistors by oxide-induced strain

A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, Takanobu Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

    Original languageEnglish
    Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
    Pages207-210
    Number of pages4
    DOIs
    Publication statusPublished - 2008
    EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble
    Duration: 2008 Jun 22008 Jun 4

    Other

    OtherIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
    CityMinatec Grenoble
    Period08/6/208/6/4

    Fingerprint

    Transconductance
    Field effect transistors
    Nanowires
    Transistors
    Tensile stress
    Oxides
    Oxidation
    Tensile strain
    Molecular dynamics
    Raman scattering
    Display devices
    Computer simulation

    Keywords

    • CMOS
    • Nanowire
    • PADOX
    • Strain
    • Transconductance enhancement
    • Transistors

    ASJC Scopus subject areas

    • Human-Computer Interaction
    • Electrical and Electronic Engineering

    Cite this

    Seike, A., Tange, T., Sano, I., Sugiura, Y., Tsuchida, I., Ohta, H., ... Ohdomari, I. (2008). Transconductance enhancement of Si nanowire transistors by oxide-induced strain. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 207-210). [4567280] https://doi.org/10.1109/ICICDT.2008.4567280

    Transconductance enhancement of Si nanowire transistors by oxide-induced strain. / Seike, A.; Tange, T.; Sano, I.; Sugiura, Y.; Tsuchida, I.; Ohta, H.; Watanabe, Takanobu; Kosemura, D.; Ogura, A.; Ohdomari, I.

    Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 207-210 4567280.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Seike, A, Tange, T, Sano, I, Sugiura, Y, Tsuchida, I, Ohta, H, Watanabe, T, Kosemura, D, Ogura, A & Ohdomari, I 2008, Transconductance enhancement of Si nanowire transistors by oxide-induced strain. in Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT., 4567280, pp. 207-210, IEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008, Minatec Grenoble, 08/6/2. https://doi.org/10.1109/ICICDT.2008.4567280
    Seike A, Tange T, Sano I, Sugiura Y, Tsuchida I, Ohta H et al. Transconductance enhancement of Si nanowire transistors by oxide-induced strain. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. p. 207-210. 4567280 https://doi.org/10.1109/ICICDT.2008.4567280
    Seike, A. ; Tange, T. ; Sano, I. ; Sugiura, Y. ; Tsuchida, I. ; Ohta, H. ; Watanabe, Takanobu ; Kosemura, D. ; Ogura, A. ; Ohdomari, I. / Transconductance enhancement of Si nanowire transistors by oxide-induced strain. Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT. 2008. pp. 207-210
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    AU - Tange, T.

    AU - Sano, I.

    AU - Sugiura, Y.

    AU - Tsuchida, I.

    AU - Ohta, H.

    AU - Watanabe, Takanobu

    AU - Kosemura, D.

    AU - Ogura, A.

    AU - Ohdomari, I.

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    AB - Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

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