Transconductance enhancement of Si nanowire transistors by oxide-induced strain

A. Seike, T. Tange, I. Sano, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transconductance (gm) enhancement in n-type and p-type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependant oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p-nwFETs and 3.0 in n-nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman spectra features in the strain controlled devices display an increase in the full width half maximum, and a shift to lower wavenumber confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

Original languageEnglish
Title of host publicationProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT
Pages207-210
Number of pages4
DOIs
Publication statusPublished - 2008 Sep 22
EventIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008 - Minatec Grenoble, France
Duration: 2008 Jun 22008 Jun 4

Publication series

NameProceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT

Conference

ConferenceIEEE International Conference on Integrated Circuit Design and Technology, ICICDT 2008
CountryFrance
CityMinatec Grenoble
Period08/6/208/6/4

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Keywords

  • CMOS
  • Nanowire
  • PADOX
  • Strain
  • Transconductance enhancement
  • Transistors

ASJC Scopus subject areas

  • Human-Computer Interaction
  • Electrical and Electronic Engineering

Cite this

Seike, A., Tange, T., Sano, I., Sugiura, Y., Tsuchida, I., Ohta, H., Watanabe, T., Kosemura, D., Ogura, A., & Ohdomari, I. (2008). Transconductance enhancement of Si nanowire transistors by oxide-induced strain. In Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT (pp. 207-210). [4567280] (Proceedings - 2008 IEEE International Conference on Integrated Circuit Design and Technology, ICICDT). https://doi.org/10.1109/ICICDT.2008.4567280