Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

Junjun Jia, Aya Yoshimura, Yukihiro Kagoya, Nobuto Oka, Yuzo Shigesato

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

Original languageEnglish
Pages (from-to)69-77
Number of pages9
JournalThin Solid Films
Volume559
DOIs
Publication statusPublished - 2014 May 30
Externally publishedYes

Fingerprint

Sputtering
sputtering
Magnetron sputtering
magnetron sputtering
electrical resistivity
particle energy
Carrier concentration
bombardment
crystallinity
transmittance
conductivity
Temperature
room temperature
Substrates
temperature

Keywords

  • AZO
  • GZO
  • Off-axis sputtering
  • Scattering mechanism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering. / Jia, Junjun; Yoshimura, Aya; Kagoya, Yukihiro; Oka, Nobuto; Shigesato, Yuzo.

In: Thin Solid Films, Vol. 559, 30.05.2014, p. 69-77.

Research output: Contribution to journalArticle

Jia, Junjun ; Yoshimura, Aya ; Kagoya, Yukihiro ; Oka, Nobuto ; Shigesato, Yuzo. / Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering. In: Thin Solid Films. 2014 ; Vol. 559. pp. 69-77.
@article{39df87acdf7a4f38874e9511456d4f30,
title = "Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering",
abstract = "Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80{\%} in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.",
keywords = "AZO, GZO, Off-axis sputtering, Scattering mechanism",
author = "Junjun Jia and Aya Yoshimura and Yukihiro Kagoya and Nobuto Oka and Yuzo Shigesato",
year = "2014",
month = "5",
day = "30",
doi = "10.1016/j.tsf.2014.02.005",
language = "English",
volume = "559",
pages = "69--77",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

TY - JOUR

T1 - Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

AU - Jia, Junjun

AU - Yoshimura, Aya

AU - Kagoya, Yukihiro

AU - Oka, Nobuto

AU - Shigesato, Yuzo

PY - 2014/5/30

Y1 - 2014/5/30

N2 - Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

AB - Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

KW - AZO

KW - GZO

KW - Off-axis sputtering

KW - Scattering mechanism

UR - http://www.scopus.com/inward/record.url?scp=84899504695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899504695&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2014.02.005

DO - 10.1016/j.tsf.2014.02.005

M3 - Article

VL - 559

SP - 69

EP - 77

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -