Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering

Junjun Jia, Aya Yoshimura, Yukihiro Kagoya, Nobuto Oka, Yuzo Shigesato

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Al and Ga doped ZnO (AZO and GZO) films were deposited using an off-axis dc magnetron sputtering method. At the off-axis positions, both the mobility and carrier density increased, resulting in enhanced conductivity of both the AZO and GZO films due to an increase in the crystallinity. The lowest resistivities of the AZO and GZO films deposited at room temperature were 1.1 × 10 - 3 Ω cm and 6.5 × 10- 4 Ω cm, respectively. Increasing the substrate temperature up to 130 °C led to a decrease in the lowest resistivity to 6.1 × 10- 4 Ω cm for the AZO films. The transmittance of all films was above 80% in the visible region. These results suggest that off-axis magnetron sputtering might be a potentially effective deposition method with the reduced bombardments from high-energy particles.

Original languageEnglish
Pages (from-to)69-77
Number of pages9
JournalThin Solid Films
Volume559
DOIs
Publication statusPublished - 2014 May 30
Externally publishedYes

Keywords

  • AZO
  • GZO
  • Off-axis sputtering
  • Scattering mechanism

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Transparent conductive Al and Ga doped ZnO films deposited using off-axis sputtering'. Together they form a unique fingerprint.

  • Cite this