Abstract
In this study, a stable reactive sputtering process using a Ti-Nb alloy target was achieved by applying a plasma impedance feedback system. High-quality transparent conductive Nb-doped TiO 2 (Nb:TiO 2 ) films were fabricated with high reproducibility. The films were deposited on unheated substrate and subsequently annealed at 873 K under vacuum conditions (below 6.0 × 10 -4 Pa) for 1 h. During reactive sputtering, the feedback system precisely controlled the oxidation of the target surface in the so-called transition region. The post-annealing process yielded polycrystalline Nb:TiO 2 films whose lattice defects decreased with increasing Nb concentration. An extremely low resistivity (7.2 × 10 -4 Ω cm) was achieved for Nb:TiO 2 film with 60-70% transmittance in the visible region. The reactive sputtering using Ti-Nb alloys is considered to be a strong candidate for industrial-scale thin-film deposition. Furthermore, it can also control the metal-oxygen stoichiometry of Nb:TiO 2 films precisely to achieve desirable properties for each industrial application.
Original language | English |
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Pages (from-to) | 551-556 |
Number of pages | 6 |
Journal | Applied Surface Science |
Volume | 301 |
DOIs | |
Publication status | Published - 2014 May 15 |
Externally published | Yes |
Keywords
- Orientation
- Reactive sputtering
- Thin films
- Ti-Nb alloy target
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films