Transport characteristics of electrons in weak short-period two-dimensional potential arrays

A. Kawaharazuka, T. Saku, Y. Tokura, Y. Horikoshi, Y. Hirayama

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Abstract

The transport characteristics of electrons in weak short-period of 50 nm two-dimensional potential arrays were reported. The electrons were formed on a back-gated undoped GaAs/AlGaAs heterostructure with a shallow channel. The back-gated undoped system helped to control the electron density over a wide range. Also the condition of unit cell being filled by one electron was achieved. A strong Coulomb interaction between the electrons confined in the potential arrays was reflected by the feature determined by the electron density.

Original languageEnglish
Pages (from-to)427-429
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number3
DOIs
Publication statusPublished - 2001 Jul 16

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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