Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks

Kazuhiro Yanagi, Hiroki Udoguchi, Satoshi Sagitani, Yugo Oshima, Taishi Takenobu, Hiromichi Kataura, Takao Ishida, Kazuyuki Matsuda, Yutaka Maniwa

    Research output: Contribution to journalArticle

    112 Citations (Scopus)

    Abstract

    A fundamental understanding of the conduction mechanisms in single-wall carbon nanotube (SWCNT) networks is crucial for their use in thin-film transistors and conducting films. However, the uncontrollable mixture state of metallic and semiconducting SWCNTs has always been an obstacle in this regard. In the present study, we revealed that the conduction mechanisms in nanotube networks formed by high-purity metallic and semiconducting SWCNTs are completely different. Quantum transport was observed in macroscopic networks of pure metallic SWCNTs. However, for semiconducting SWCNT networks, Coulomb-gap-type conduction was observed, due to Coulomb interactions between localized electrons. Crossovers among a weakly localized state and strongly localized states with and without Coulomb interactions were observed for transport electrons by varying the relative content of metallic and semiconducting SWCNTs. It was found that hopping barriers, which always exist in normal SWCNT networks and are serious obstacles to achieving high conductivity, were not present in pure metallic SWCNT networks.

    Original languageEnglish
    Pages (from-to)4027-4032
    Number of pages6
    JournalACS Nano
    Volume4
    Issue number7
    DOIs
    Publication statusPublished - 2010 Jul 27

    Fingerprint

    Carbon Nanotubes
    Carbon nanotubes
    carbon nanotubes
    Coulomb interactions
    conduction
    Conductive films
    Thin film transistors
    Nanotubes
    Electrons
    nanotubes
    crossovers
    purity
    electrons
    transistors
    interactions
    conductivity
    thin films

    Keywords

    • carbon nanotube
    • metallic and semiconducting types
    • transport mechanisms
    • variable range hopping
    • weak localization

    ASJC Scopus subject areas

    • Engineering(all)
    • Materials Science(all)
    • Physics and Astronomy(all)

    Cite this

    Yanagi, K., Udoguchi, H., Sagitani, S., Oshima, Y., Takenobu, T., Kataura, H., ... Maniwa, Y. (2010). Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks. ACS Nano, 4(7), 4027-4032. https://doi.org/10.1021/nn101177n

    Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks. / Yanagi, Kazuhiro; Udoguchi, Hiroki; Sagitani, Satoshi; Oshima, Yugo; Takenobu, Taishi; Kataura, Hiromichi; Ishida, Takao; Matsuda, Kazuyuki; Maniwa, Yutaka.

    In: ACS Nano, Vol. 4, No. 7, 27.07.2010, p. 4027-4032.

    Research output: Contribution to journalArticle

    Yanagi, K, Udoguchi, H, Sagitani, S, Oshima, Y, Takenobu, T, Kataura, H, Ishida, T, Matsuda, K & Maniwa, Y 2010, 'Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks', ACS Nano, vol. 4, no. 7, pp. 4027-4032. https://doi.org/10.1021/nn101177n
    Yanagi K, Udoguchi H, Sagitani S, Oshima Y, Takenobu T, Kataura H et al. Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks. ACS Nano. 2010 Jul 27;4(7):4027-4032. https://doi.org/10.1021/nn101177n
    Yanagi, Kazuhiro ; Udoguchi, Hiroki ; Sagitani, Satoshi ; Oshima, Yugo ; Takenobu, Taishi ; Kataura, Hiromichi ; Ishida, Takao ; Matsuda, Kazuyuki ; Maniwa, Yutaka. / Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks. In: ACS Nano. 2010 ; Vol. 4, No. 7. pp. 4027-4032.
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