Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks

Kazuhiro Yanagi; Hiroki Udoguchi; Satoshi Sagitani; Yugo Oshima; Taishi Takenobu; Hiromichi Kataura; Takao Ishida; Kazuyuki Matsuda; Yutaka Maniwa

doi:10.1021/nn101177n

Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks

Kazuhiro Yanagi^*, Hiroki Udoguchi, Satoshi Sagitani, Yugo Oshima, Taishi Takenobu, Hiromichi Kataura, Takao Ishida, Kazuyuki Matsuda, Yutaka Maniwa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

150 Citations (Scopus)

Abstract

A fundamental understanding of the conduction mechanisms in single-wall carbon nanotube (SWCNT) networks is crucial for their use in thin-film transistors and conducting films. However, the uncontrollable mixture state of metallic and semiconducting SWCNTs has always been an obstacle in this regard. In the present study, we revealed that the conduction mechanisms in nanotube networks formed by high-purity metallic and semiconducting SWCNTs are completely different. Quantum transport was observed in macroscopic networks of pure metallic SWCNTs. However, for semiconducting SWCNT networks, Coulomb-gap-type conduction was observed, due to Coulomb interactions between localized electrons. Crossovers among a weakly localized state and strongly localized states with and without Coulomb interactions were observed for transport electrons by varying the relative content of metallic and semiconducting SWCNTs. It was found that hopping barriers, which always exist in normal SWCNT networks and are serious obstacles to achieving high conductivity, were not present in pure metallic SWCNT networks.

Original language	English
Pages (from-to)	4027-4032
Number of pages	6
Journal	ACS Nano
Volume	4
Issue number	7
DOIs	https://doi.org/10.1021/nn101177n
Publication status	Published - 2010 Jul 27

Keywords

carbon nanotube
metallic and semiconducting types
transport mechanisms
variable range hopping
weak localization

ASJC Scopus subject areas

Engineering(all)
Materials Science(all)
Physics and Astronomy(all)

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title = "Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks",

abstract = "A fundamental understanding of the conduction mechanisms in single-wall carbon nanotube (SWCNT) networks is crucial for their use in thin-film transistors and conducting films. However, the uncontrollable mixture state of metallic and semiconducting SWCNTs has always been an obstacle in this regard. In the present study, we revealed that the conduction mechanisms in nanotube networks formed by high-purity metallic and semiconducting SWCNTs are completely different. Quantum transport was observed in macroscopic networks of pure metallic SWCNTs. However, for semiconducting SWCNT networks, Coulomb-gap-type conduction was observed, due to Coulomb interactions between localized electrons. Crossovers among a weakly localized state and strongly localized states with and without Coulomb interactions were observed for transport electrons by varying the relative content of metallic and semiconducting SWCNTs. It was found that hopping barriers, which always exist in normal SWCNT networks and are serious obstacles to achieving high conductivity, were not present in pure metallic SWCNT networks.",

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AU - Udoguchi, Hiroki

AU - Sagitani, Satoshi

AU - Oshima, Yugo

AU - Takenobu, Taishi

AU - Kataura, Hiromichi

AU - Ishida, Takao

AU - Matsuda, Kazuyuki

AU - Maniwa, Yutaka

PY - 2010/7/27

Y1 - 2010/7/27

N2 - A fundamental understanding of the conduction mechanisms in single-wall carbon nanotube (SWCNT) networks is crucial for their use in thin-film transistors and conducting films. However, the uncontrollable mixture state of metallic and semiconducting SWCNTs has always been an obstacle in this regard. In the present study, we revealed that the conduction mechanisms in nanotube networks formed by high-purity metallic and semiconducting SWCNTs are completely different. Quantum transport was observed in macroscopic networks of pure metallic SWCNTs. However, for semiconducting SWCNT networks, Coulomb-gap-type conduction was observed, due to Coulomb interactions between localized electrons. Crossovers among a weakly localized state and strongly localized states with and without Coulomb interactions were observed for transport electrons by varying the relative content of metallic and semiconducting SWCNTs. It was found that hopping barriers, which always exist in normal SWCNT networks and are serious obstacles to achieving high conductivity, were not present in pure metallic SWCNT networks.

AB - A fundamental understanding of the conduction mechanisms in single-wall carbon nanotube (SWCNT) networks is crucial for their use in thin-film transistors and conducting films. However, the uncontrollable mixture state of metallic and semiconducting SWCNTs has always been an obstacle in this regard. In the present study, we revealed that the conduction mechanisms in nanotube networks formed by high-purity metallic and semiconducting SWCNTs are completely different. Quantum transport was observed in macroscopic networks of pure metallic SWCNTs. However, for semiconducting SWCNT networks, Coulomb-gap-type conduction was observed, due to Coulomb interactions between localized electrons. Crossovers among a weakly localized state and strongly localized states with and without Coulomb interactions were observed for transport electrons by varying the relative content of metallic and semiconducting SWCNTs. It was found that hopping barriers, which always exist in normal SWCNT networks and are serious obstacles to achieving high conductivity, were not present in pure metallic SWCNT networks.

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Transport mechanisms in metallic and semiconducting single-wall carbon nanotube networks

Abstract

Keywords

ASJC Scopus subject areas

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