Trapping mechanism on oxygen-terminated diamond surfaces

Yutaka Itoh, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

    Original languageEnglish
    Article number203503
    JournalApplied Physics Letters
    Volume89
    Issue number20
    DOIs
    Publication statusPublished - 2006

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    diamonds
    trapping
    oxygen
    field effect transistors
    hysteresis
    traps
    valence
    irradiation
    wavelengths

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Trapping mechanism on oxygen-terminated diamond surfaces. / Itoh, Yutaka; Sumikawa, Yu; Umezawa, Hitoshi; Kawarada, Hiroshi.

    In: Applied Physics Letters, Vol. 89, No. 20, 203503, 2006.

    Research output: Contribution to journalArticle

    Itoh, Yutaka ; Sumikawa, Yu ; Umezawa, Hitoshi ; Kawarada, Hiroshi. / Trapping mechanism on oxygen-terminated diamond surfaces. In: Applied Physics Letters. 2006 ; Vol. 89, No. 20.
    @article{532a4cb88b674bcea384ff1c3ec13413,
    title = "Trapping mechanism on oxygen-terminated diamond surfaces",
    abstract = "Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.",
    author = "Yutaka Itoh and Yu Sumikawa and Hitoshi Umezawa and Hiroshi Kawarada",
    year = "2006",
    doi = "10.1063/1.2387983",
    language = "English",
    volume = "89",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    publisher = "American Institute of Physics Publising LLC",
    number = "20",

    }

    TY - JOUR

    T1 - Trapping mechanism on oxygen-terminated diamond surfaces

    AU - Itoh, Yutaka

    AU - Sumikawa, Yu

    AU - Umezawa, Hitoshi

    AU - Kawarada, Hiroshi

    PY - 2006

    Y1 - 2006

    N2 - Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

    AB - Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

    UR - http://www.scopus.com/inward/record.url?scp=33751103905&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=33751103905&partnerID=8YFLogxK

    U2 - 10.1063/1.2387983

    DO - 10.1063/1.2387983

    M3 - Article

    VL - 89

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 20

    M1 - 203503

    ER -