Trapping mechanism on oxygen-terminated diamond surfaces

Yutaka Itoh; Yu Sumikawa; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1063/1.2387983

Trapping mechanism on oxygen-terminated diamond surfaces

Yutaka Itoh^*, Yu Sumikawa, Hitoshi Umezawa, Hiroshi Kawarada

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

Original language	English
Article number	203503
Journal	Applied Physics Letters
Volume	89
Issue number	20
DOIs	https://doi.org/10.1063/1.2387983
Publication status	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.2387983

Cite this

@article{532a4cb88b674bcea384ff1c3ec13413,

title = "Trapping mechanism on oxygen-terminated diamond surfaces",

abstract = "Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.",

author = "Yutaka Itoh and Yu Sumikawa and Hitoshi Umezawa and Hiroshi Kawarada",

note = "Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.",

year = "2006",

doi = "10.1063/1.2387983",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Trapping mechanism on oxygen-terminated diamond surfaces

AU - Itoh, Yutaka

AU - Sumikawa, Yu

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

N1 - Funding Information: This work is supported in part by a Grant-in-Aid for Center of Excellence (COE) Research from the Ministry of Education, Culture, Sports, Science, and Technology. This work is also supported in part by Advanced Research Institute for Science and Engineering, Waseda University.

PY - 2006

Y1 - 2006

N2 - Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

AB - Mechanisms of the hole trap and detrap on the oxygen-terminated diamond surfaces measured by diamond in-plane-gated field-effect transistors (FETs) have been investigated. Reproducible hysteresis characteristics are observed in the IDS - VGS characteristics of the diamond in-plane-gated FETs. They are caused by carrier trapping in the oxidized diamond surface and detrapping under a light irradiation, the wavelength of which affects the hysteresis width. Carriers are trapped by continuous surface states deeper than 2.0 eV from the valence band maximum in the oxidized diamond surface, where the position of the highest occupied level (Fermi level) is located between 2.0 and 2.4 eV.

UR - http://www.scopus.com/inward/record.url?scp=33751103905&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33751103905&partnerID=8YFLogxK

U2 - 10.1063/1.2387983

DO - 10.1063/1.2387983

M3 - Article

AN - SCOPUS:33751103905

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203503

ER -

Trapping mechanism on oxygen-terminated diamond surfaces

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this