Triode-type basic display structure using Si-doped AlN field emitters

Yashitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - 2003 Nov 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Triode-type basic display structure using Si-doped AlN field emitters'. Together they form a unique fingerprint.

  • Cite this