Triode-type basic display structure using Si-doped AlN field emitters

Yashitaka Taniyasu, Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.

Original languageEnglish
Pages (from-to)199-201
Number of pages3
JournalPhysica Status Solidi (A) Applied Research
Volume200
Issue number1
DOIs
Publication statusPublished - 2003 Nov
Externally publishedYes

Fingerprint

Field emission displays
Triodes
triodes
Phosphors
Luminescence
field emission
emitters
Display devices
grids
phosphors
Electric potential
Field emission
luminescence
Luminance
Anodes
Electric fields
electric potential
Electrons
mesh
brightness

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Triode-type basic display structure using Si-doped AlN field emitters. / Taniyasu, Yashitaka; Kasu, Makoto; Makimoto, Toshiki; Kobayashi, Naoki.

In: Physica Status Solidi (A) Applied Research, Vol. 200, No. 1, 11.2003, p. 199-201.

Research output: Contribution to journalArticle

Taniyasu, Yashitaka ; Kasu, Makoto ; Makimoto, Toshiki ; Kobayashi, Naoki. / Triode-type basic display structure using Si-doped AlN field emitters. In: Physica Status Solidi (A) Applied Research. 2003 ; Vol. 200, No. 1. pp. 199-201.
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