Tunable monolithic DWDM band-selection interleaver filter switch on silicon-on-insulator substrate

Zhigang Wu, Soichiro Honda, Junya Matsui, Katsuyuki Utaka, Tomohiko Edura, Masahide Tokuda, Ken Tsutsui, Wada Wada

    Research output: Contribution to journalArticle

    12 Citations (Scopus)

    Abstract

    A tunable band-selection interleaver filter switch formed on a silicon-on-insulator (SOI) substrate for dense wavelength-division-multiplexing (DWDM) system was fabricated, and its fundamental performances were experimentally demonstrated. The device consists of monolithic integration of a Michelson interferometer (MI) structure with two arm-waveguides with different lengths, appropriately designed for ITU-grid separation, a phase-modulation electrode on one arm and tunable wideband Bragg gratings reflectors. An SOI rib waveguide structure with a medium mode size was adopted for low loss and easy fabrication. A bandwidth of the grating, formed by electron beam (EB) lithography and deep reactive-ion etching (Deep-RIE), was rather large of 4 nm at -10 dB transmission level, from which a large coupling coefficient of the Bragg grating of 105 cm-1 was evaluated. A large tuning range of the Bragg grating of 17 nm was obtained. An extinction ratio of the interleaver filter was about 18 dB, and the interleaving switching was also attained with an applied electric power of 50 mW and a switching speed of about 1 ms.

    Original languageEnglish
    Pages (from-to)3363-3368
    Number of pages6
    JournalJournal of Lightwave Technology
    Volume26
    Issue number19
    DOIs
    Publication statusPublished - 2008 Oct 1

    Fingerprint

    wavelength division multiplexing
    Bragg gratings
    switches
    insulators
    filters
    silicon
    waveguides
    Michelson interferometers
    electric power
    coupling coefficients
    phase modulation
    reflectors
    extinction
    lithography
    tuning
    grids
    etching
    gratings
    electron beams
    broadband

    Keywords

    • Bragg reflector
    • Dense wavelength-division-multiplexing (DWDM)
    • Interleaver filter
    • Michelson interferometer
    • Silicon-on-insulator waveguide

    ASJC Scopus subject areas

    • Atomic and Molecular Physics, and Optics

    Cite this

    Tunable monolithic DWDM band-selection interleaver filter switch on silicon-on-insulator substrate. / Wu, Zhigang; Honda, Soichiro; Matsui, Junya; Utaka, Katsuyuki; Edura, Tomohiko; Tokuda, Masahide; Tsutsui, Ken; Wada, Wada.

    In: Journal of Lightwave Technology, Vol. 26, No. 19, 01.10.2008, p. 3363-3368.

    Research output: Contribution to journalArticle

    Wu, Zhigang ; Honda, Soichiro ; Matsui, Junya ; Utaka, Katsuyuki ; Edura, Tomohiko ; Tokuda, Masahide ; Tsutsui, Ken ; Wada, Wada. / Tunable monolithic DWDM band-selection interleaver filter switch on silicon-on-insulator substrate. In: Journal of Lightwave Technology. 2008 ; Vol. 26, No. 19. pp. 3363-3368.
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    abstract = "A tunable band-selection interleaver filter switch formed on a silicon-on-insulator (SOI) substrate for dense wavelength-division-multiplexing (DWDM) system was fabricated, and its fundamental performances were experimentally demonstrated. The device consists of monolithic integration of a Michelson interferometer (MI) structure with two arm-waveguides with different lengths, appropriately designed for ITU-grid separation, a phase-modulation electrode on one arm and tunable wideband Bragg gratings reflectors. An SOI rib waveguide structure with a medium mode size was adopted for low loss and easy fabrication. A bandwidth of the grating, formed by electron beam (EB) lithography and deep reactive-ion etching (Deep-RIE), was rather large of 4 nm at -10 dB transmission level, from which a large coupling coefficient of the Bragg grating of 105 cm-1 was evaluated. A large tuning range of the Bragg grating of 17 nm was obtained. An extinction ratio of the interleaver filter was about 18 dB, and the interleaving switching was also attained with an applied electric power of 50 mW and a switching speed of about 1 ms.",
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