Tuning the electrical property of a single layer graphene nanoribbon by adsorption of planar molecular nanoparticles

Reetu Raj Pandey, Minoru Fukumori, Amin Termehyousefi, Masanori Eguchi, Daisuke Tanaka, Takuji Ogawa, Hirofumi Tanaka

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6 Citations (Scopus)

Abstract

In this study, a simple and fast approach of band gap formation in a single layer graphene nanoribbon (sGNR) is demonstrated by using hexaazatriphenylenehexacarbonitrile (HAT-CN6) as an adsorbate molecule. sGNRs were successfully synthesized through the unzipping of double-walled carbon nanotubes followed by casting HAT-CN6 in acetone solution to alter the electronic properties of the sGNRs. Then, the electrical property of a sGNR was measured using a field effect transistor structure and also by point-contact current imaging atomic force microscopy. The results demonstrate the formation of electron trapping sites with the nanoparticles and the neck structure of the sGNR near the adsorbed region of the molecule. Therefore, the charge carriers on the sGNR can only pass through the neck region, which works similarly to a narrow sGNR. Such a narrow sGNR has a lateral confinement of charge carriers around the neck region; hence, the device becomes semiconducting. The fabricated semiconducting sGNR could be widely used in electronic devices.

Original languageEnglish
Article number175704
JournalNanotechnology
Volume28
Issue number17
DOIs
Publication statusPublished - 2017 Apr 3
Externally publishedYes

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Keywords

  • activation energy
  • field effect transistor
  • metal semiconductor transition
  • semiconducting behavior
  • unzipping DWNT

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Pandey, R. R., Fukumori, M., Termehyousefi, A., Eguchi, M., Tanaka, D., Ogawa, T., & Tanaka, H. (2017). Tuning the electrical property of a single layer graphene nanoribbon by adsorption of planar molecular nanoparticles. Nanotechnology, 28(17), [175704]. https://doi.org/10.1088/1361-6528/aa6567