Tunnel junctions on as-grown MgB2 films

Kenji Ueda*, Michio Naito

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

Original languageEnglish
Pages (from-to)134-135
Number of pages2
JournalPhysica C: Superconductivity and its applications
Issue number1-4
Publication statusPublished - 2004 Aug
Externally publishedYes
EventProceedings of the International Conference on Materials - Rio de Janeiro, Brazil
Duration: 2003 May 252003 May 30


  • As-grown
  • Film
  • MgB
  • Multi-gap
  • Tunnel junctions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering


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