Tunnel junctions on as-grown MgB2 films

Kenji Ueda; Michio Naito

doi:10.1016/j.physc.2004.02.164

Tunnel junctions on as-grown MgB₂ films

Kenji Ueda^*, Michio Naito

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

9 Citations (Scopus)

Abstract

We prepared MgB₂ films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed T_c (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB₂ films. Of these, Au/MgO/MgB₂ junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB₂/Al ₂O₃/MgB₂ junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

Original language	English
Pages (from-to)	134-135
Number of pages	2
Journal	Physica C: Superconductivity and its applications
Volume	408-410
Issue number	1-4
DOIs	https://doi.org/10.1016/j.physc.2004.02.164
Publication status	Published - 2004 Aug
Externally published	Yes
Event	Proceedings of the International Conference on Materials - Rio de Janeiro, Brazil Duration: 2003 May 25 → 2003 May 30

Keywords

As-grown
Film
MgB
Multi-gap
Tunnel junctions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/j.physc.2004.02.164

Cite this

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title = "Tunnel junctions on as-grown MgB2 films",

abstract = "We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.",

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T1 - Tunnel junctions on as-grown MgB2 films

AU - Ueda, Kenji

AU - Naito, Michio

PY - 2004/8

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N2 - We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

AB - We prepared MgB2 films by coevaporation of pure Mg and B metals in an ultra high vacuum chamber. These films have c-axis orientation and a slightly depressed Tc (∼ 35 K). We fabricated various tunnel junctions (SIN and SIS) using these as-grown MgB2 films. Of these, Au/MgO/MgB2 junctions showed typical SIN characteristics with a clear superconducting gap of Δ ∼ 2.5 meV. This gap value may correspond to the smaller gap in the multi-gap scenario. Preliminary MgB2/Al 2O3/MgB2 junctions exhibited SIS characteristics, although not ideal, with a similar value of Δ.

KW - As-grown

KW - Film

KW - MgB

KW - Multi-gap

KW - Tunnel junctions

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